Global Patent Index - EP 1350255 A2

EP 1350255 A2 20031008 - FISSION-VOLTAIC REACTOR

Title (en)

FISSION-VOLTAIC REACTOR

Title (de)

SPALTUNGSVOLTAISCHER REAKTOR

Title (fr)

REACTEUR VOLTAIQUE A FISSION

Publication

EP 1350255 A2 20031008 (EN)

Application

EP 01997817 A 20011119

Priority

  • US 0144666 W 20011119
  • US 71638800 A 20001120

Abstract (en)

[origin: WO0243076A2] A nuclear reactor including a core having nuclear fuel material, moderator material and a semiconductor device. The core by itself has a subcritical mass. The reactor also includes a fission inducing source which is movable from a first position outside the core to a second position inside the core, whereby the core becomes critical. Finally, the reactor includes a neutron reflector which surrounds the core and includes an opening to permit the insertion and removal of the fission inducing source. For, for instance, terrestrial applications the reactor would also include a shield surrounding the neutron reflector. Preferably, the core consists of concentric cylinders of the semiconductor device, the nuclear fuel material, and the semiconductor device, whereby the nuclear fuel material is sandwiched between layers of the semiconductor device. The nuclear fuel material is in the form of a thin foil or deposit which has a thickness in the range of 1.5 mg/cm<2> to 10 mg/cm<2>, which thickness depends on the particular type of fuel used. The semiconductor device includes a semiconductor material that has a high electrical collection efficiency and is able to survive both the high temperatures and high particle fluences generated by the nuclear fuel material. The semiconductor device is selected from the group including p-n junction diodes and Schottky barrier diodes.

IPC 1-7

G21C 1/30; G21D 7/00; G21H 1/06

IPC 8 full level

G21D 7/00 (2006.01); G21H 1/06 (2006.01)

CPC (source: EP)

G21D 7/00 (2013.01); G21H 1/06 (2013.01); Y02E 30/00 (2013.01); Y02E 30/30 (2013.01)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

WO 0243076 A2 20020530; WO 0243076 A3 20030213; AU 1793302 A 20020603; CA 2431372 A1 20020530; EP 1350255 A2 20031008; EP 1350255 A4 20040414

DOCDB simple family (application)

US 0144666 W 20011119; AU 1793302 A 20011119; CA 2431372 A 20011119; EP 01997817 A 20011119