EP 1350268 A2 20031008 - METHOD FOR THE PRODUCTION OF TRENCH CAPACITORS FOR INTEGRATED SEMICONDUCTOR MEMORIES
Title (en)
METHOD FOR THE PRODUCTION OF TRENCH CAPACITORS FOR INTEGRATED SEMICONDUCTOR MEMORIES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON GRABENKONDENSATOREN FÜR INTEGRIERTE HALBLEITERSPEICHER
Title (fr)
PROCEDE DE PRODUCTION DE CONDENSATEURS DE TRANCHEE POUR MEMOIRES INTEGREES A SEMICONDUCTEURS
Publication
Application
Priority
- DE 10100582 A 20010109
- EP 0200102 W 20020108
Abstract (en)
[origin: WO02056369A2] A method for the production of trench capacitors, especially memory cells and at least one selection transistor for integrated semiconductor memories. According to the invention, the trench for the trench capacitor has a lower trench area in which the capacitor is arranged and an upper trench area in which an electrically conducting connection between an electrode of the capacitor to a diffusion area of the selection transistor is disposed.The inventive method reduces the number of process steps for the production of memory cells and enables the production of buried shrouds in the memory capacitors which exhibit the same insulation quality as that which is required for the production of highly integrated memory cells (diameter <300 nm).
IPC 1-7
IPC 8 full level
H10B 12/00 (2023.01); H01L 21/20 (2006.01)
CPC (source: EP KR US)
H10B 12/0385 (2023.02 - EP US); H10B 12/0387 (2023.02 - EP US); H10B 99/00 (2023.02 - KR)
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 02056369 A2 20020718; WO 02056369 A3 20030320; DE 10100582 A1 20020718; EP 1350268 A2 20031008; JP 2004523107 A 20040729; KR 100545904 B1 20060126; KR 20030070097 A 20030827; TW 571398 B 20040111; US 2005118775 A1 20050602; US 7087484 B2 20060808
DOCDB simple family (application)
EP 0200102 W 20020108; DE 10100582 A 20010109; EP 02710780 A 20020108; JP 2002556937 A 20020108; KR 20037009142 A 20030708; TW 91100195 A 20020109; US 61639603 A 20030709