EP 1352420 A1 20031015 - INSULATING STRUCTURES OF BURIED LAYERS WITH BURIED TRENCHES AND METHOD FOR MAKING SAME
Title (en)
INSULATING STRUCTURES OF BURIED LAYERS WITH BURIED TRENCHES AND METHOD FOR MAKING SAME
Title (de)
ISOLIERENDE STRUKTUREN VERGRABENER SCHICHTEN MIT VERGRABENEN GRÄBEN UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
STRUCTURE D ISOLATION DE COUCHES ENTERREES PAR TRANCHEES ENTERREES, ET PROCEDE DE FABRICATION
Publication
Application
Priority
- FR 0200055 W 20020109
- FR 0100412 A 20010112
Abstract (en)
[origin: WO02056363A1] The invention concerns an integrated circuit semiconductor substrate comprising at least a dielectrically vertical buried trench and having a height at least five times more than its width, and an epitaxial semiconductor layer (6) covering said trench laterally separating two regions (4, 5). The invention is applicable to MOS, CMOS and BICMOS technologies. The invention also concerns a method for making said substrate.
IPC 1-7
H01L 21/762; H01L 21/74; H01L 27/06; H01L 21/8249; H01L 21/8238
IPC 8 full level
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/8222 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/8248 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 27/092 (2006.01)
CPC (source: EP US)
H01L 21/76224 (2013.01 - EP US); H01L 21/823481 (2013.01 - EP US); H01L 21/8249 (2013.01 - EP US)
Citation (search report)
See references of WO 02056363A1
Citation (examination)
- US 6083797 A 20000704 - WONG SHYH-CHYI [TW], et al
- JP H0945904 A 19970214 - MATSUSHITA ELECTRONICS CORP
- US 4885618 A 19891205 - SCHUBERT PETER J [US], et al
- BRONNER G B, ET AL: "EPITAXY OVER TRENCH TECHNOLOGY FOR ULSI DRAMS", SYMPOSIUM ON VLSI TECHNOLOGY. SAN DIEGO, MAY 10 - 13, 1988, 10 May 1988 (1988-05-10), NEW YORK, IEEE, US, pages 21 - 22, XP000043511
Designated contracting state (EPC)
AT BE CH CY DE FR GB IT LI
DOCDB simple family (publication)
WO 02056363 A1 20020718; EP 1352420 A1 20031015; FR 2819629 A1 20020719; FR 2819629 B1 20030704; JP 2004527102 A 20040902; US 2004075107 A1 20040422; US 6812541 B2 20041102
DOCDB simple family (application)
FR 0200055 W 20020109; EP 02710091 A 20020109; FR 0100412 A 20010112; JP 2002556931 A 20020109; US 25053803 A 20031202