Title (en)

ORGANIC FIELD EFFECT TRANSISTOR WITH A PHOTOSTRUCTURED GATE DIELECTRIC, METHOD FOR THE PRODUCTION AND USE THEREOF IN ORGANIC ELECTRONICS

Title (de)

ORGANISCHER FELDEFFEKT-TRANSISTOR MIT FOTOSTRUKTURIERTEM GATE-DIELEKTRIKUM, EIN VERFAHREN ZU DESSEN ERZEUGUNG UND DIE VERWENDUNG IN DER ORGANISCHEN ELEKTRONIK

Title (fr)

TRANSISTOR A EFFET DE CHAMP ORGANIQUE A DIELECTRIQUE DE GRILLE PHOTOSTRUCTURE, SON PROCEDE DE PRODUCTION ET SON UTILISATION EN ELECTRONIQUE ORGANIQUE

Publication

EP 1358684 A1 20031105 (DE)

Application

EP 02706645 A 20020129

Priority

• DE 0200312 W 20020129
• DE 10105914 A 20010209

Abstract (en)

[origin: WO02065557A1] The invention relates to an organic field effect transistor which is especially characterized by a cross-linked, structured insulating layer (4) on which the gate electrode (5) is arranged. The structure of the OFET ensures that the gate electrode (5) of an OFET can be used as a strip conductor to the source electrode (2) of the next transistor and can be used in the construction of larger circuits. .

IPC 1-7

H01L 51/20

IPC 8 full level

H01L 51/05 (2006.01); H01L 21/336 (2006.01); H01L 29/786 (2006.01); H01L 51/30 (2006.01); H01L 51/40 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01)

CPC (source: EP US)

H10K 10/468 (2023.02 - EP US); H10K 19/80 (2023.02 - EP); H10K 10/464 (2023.02 - EP US); H10K 19/00 (2023.02 - US); H10K 71/211 (2023.02 - EP US); H10K 71/60 (2023.02 - EP US); H10K 77/111 (2023.02 - EP US); H10K 85/111 (2023.02 - EP US); H10K 85/1135 (2023.02 - EP US)

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 02065557 A1 20020822; DE 10105914 C1 20021010; EP 1358684 A1 20031105; JP 2004518305 A 20040617; US 2004219460 A1 20041104; US 7238961 B2 20070703

DOCDB simple family (application)

DE 0200312 W 20020129; DE 10105914 A 20010209; EP 02706645 A 20020129; JP 2002564769 A 20020129; US 46763603 A 20030811