EP 1364411 A1 20031126 - RELAXED SILICON GERMANIUM PLATFORM FOR HIGH SPEED CMOS ELECTRONICS AND HIGH SPEED ANALOG CIRCUITS

Title (en)

RELAXED SILICON GERMANIUM PLATFORM FOR HIGH SPEED CMOS ELECTRONICS AND HIGH SPEED ANALOG CIRCUITS

Title (de)

RELAXIERTE SILIZIUM-GERMANIUM PLATTFORM FÜR HOCHGESCHWINDIGKEITS-CMOS ELEKTRONIK UND ANALOGE HOCHGESCHWINDIGKEITS-SCHALTUNGEN

Title (fr)

PLATE-FORME DE SILICIUM GERMANIUM RELACHEE POUR ELECTRONIQUE CMOS TRES RAPIDE ET CIRCUITS ANALOGIQUES TRES RAPIDES

Publication

EP 1364411 A1 20031126 (EN)

Application

EP 02709406 A 20020207

Priority

US 0203681 W 20020207
US 27311201 P 20010302
US 90655101 A 20010716
US 90654501 A 20010716

Abstract (en)

[origin: WO02071495A1] Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography. In accordance with one embodiment of the invention, there is provided a semiconductor structure including a planarized relaxed Si1-xGex layer on a substrate, and a device heterostructure deposited on said planarized relaxed Si1-x Gex layer including at least one strained layer.

IPC 1-7

H01L 29/80; H01L 29/10; H01L 21/336; H01L 29/778; H01L 21/20

IPC 8 full level

H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/337 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/80 (2006.01)

CPC (source: EP)

H01L 21/02381 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/02532 (2013.01); H01L 21/76251 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01); H01L 27/092 (2013.01); H01L 29/1054 (2013.01); H01L 29/66916 (2013.01); H01L 29/802 (2013.01); H01L 29/7838 (2013.01)

Citation (search report)

See references of WO 02071495A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 02071495 A1 20020912; EP 1364411 A1 20031126; JP 2004531054 A 20041007

DOCDB simple family (application)

US 0203681 W 20020207; EP 02709406 A 20020207; JP 2002570310 A 20020207