EP 1365880 A1 20031203 - ULTRAVIOLET LASER ABLATIVE PATTERNING OF MICROSTRUCTURES IN SEMICONDUCTORS
Title (en)
ULTRAVIOLET LASER ABLATIVE PATTERNING OF MICROSTRUCTURES IN SEMICONDUCTORS
Title (de)
HERSTELLUNG VON MUSTERN VON MIKROSTRUKTUREN IN HALBLEITERN MIT UV-LASER
Title (fr)
REALISATION DES MOTIFS DE MICROSTRUCTURES DE SEMICONDUCTEURSPAR ABLATION AU LASER ULTRAVIOLET
Publication
Application
Priority
- US 0200867 W 20020110
- US 26555601 P 20010131
- US 80338201 A 20010309
Abstract (en)
[origin: WO02060636A1] Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of silicon using this focused spot size is greater than 200 µJ per pulse at PRFs greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
IPC 1-7
IPC 8 full level
B23K 26/064 (2014.01); B23K 26/08 (2014.01); B23K 26/10 (2006.01); B23K 26/382 (2014.01); B29C 35/08 (2006.01); B29C 67/00 (2006.01); H01L 21/302 (2006.01)
CPC (source: EP)
B23K 26/0626 (2013.01); B23K 26/0853 (2013.01); B23K 26/0884 (2013.01); B23K 26/40 (2013.01); B23K 2101/40 (2018.08); B23K 2103/52 (2018.08)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02060636 A1 20020808; CA 2436736 A1 20020808; CN 1301178 C 20070221; CN 1527754 A 20040908; EP 1365880 A1 20031203; EP 1365880 A4 20080416; GB 0317853 D0 20030903; GB 2389811 A 20031224; GB 2389811 B 20041027; JP 2004526575 A 20040902; JP 4634692 B2 20110216; TW 525240 B 20030321
DOCDB simple family (application)
US 0200867 W 20020110; CA 2436736 A 20020110; CN 02804404 A 20020110; EP 02707453 A 20020110; GB 0317853 A 20020110; JP 2002560818 A 20020110; TW 91100223 A 20020110