EP 1366516 A2 20031203 - MEMORY CELL COMPRISING A TRENCH AND METHOD FOR PRODUCTION THEREOF
Title (en)
MEMORY CELL COMPRISING A TRENCH AND METHOD FOR PRODUCTION THEREOF
Title (de)
SPEICHERZELLE MIT EINEM GRABEN UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
CELLULE DE MEMOIRE POURVUE D'UNE TRANCHEE ET PROCEDE DE FABRICATION
Publication
Application
Priority
- DE 0200596 W 20020219
- DE 10111499 A 20010309
Abstract (en)
[origin: DE10111499C1] Storage cell comprises a substrate (2); a trench (3) having a lower region, a middle region, an upper region and an inner wall arranged in the substrate; an insulation collar (8) arranged in the middle region on the inner wall of the trench; a dielectric layer (9) arranged in the lower region of the trench; a conducting trench filling (10) arranged in the lower region and the middle region of the trench; an epitaxially grown layer (11) arranged in the upper region of the trench on the inner wall; and a barrier layer (60) arranged between the filling and the epitaxially grown layer. An Independent claim is also included for a process for the production of the storage cell. Preferred Features: A second dielectric layer with an inner opening is arranged in the upper region of the trench above the epitaxially grown layer. A second trench is arranged in the epitaxially grown layer.
IPC 1-7
IPC 8 full level
H01L 27/108 (2006.01); H01L 21/8242 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/0383 (2023.02 - EP US); H10B 12/053 (2023.02 - EP US); H10B 12/0385 (2023.02 - EP US); H10B 12/488 (2023.02 - EP US)
Citation (search report)
See references of WO 02073694A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
DE 10111499 C1 20020711; EP 1366516 A2 20031203; JP 2004524695 A 20040812; JP 3923014 B2 20070530; KR 100706918 B1 20070411; KR 20030088454 A 20031119; TW 556338 B 20031001; US 2004079990 A1 20040429; US 7067372 B2 20060627; WO 02073694 A2 20020919; WO 02073694 A3 20030206
DOCDB simple family (application)
DE 10111499 A 20010309; DE 0200596 W 20020219; EP 02714036 A 20020219; JP 2002572639 A 20020219; KR 20037011824 A 20030908; TW 91104369 A 20020308; US 65792903 A 20030909