EP 1368711 A4 20060719 - VACUUM ULTRAVIOLET TRANSMITTING SILICON OXYFLUORIDE LITHOGRAPHY GLASS
Title (en)
VACUUM ULTRAVIOLET TRANSMITTING SILICON OXYFLUORIDE LITHOGRAPHY GLASS
Title (de)
IM VAKUUM ULTRAVIOLETTDURCHLÄSSIGES SILIZIUMOXYFLUORID-LITHOGRAPHIEGLAS
Title (fr)
VERRE LITHOGRAPHIQUE D'OXYFLUORURE DE SILICIUM TRANSMETTANT LES ULTRAVIOLETS EXTREMES
Publication
Application
Priority
- US 0144547 W 20011128
- US 27113601 P 20010224
Abstract (en)
[origin: WO02069054A1] High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content < 0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a "dry," silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1x1017 molecules/cm3 of molecular hydrogen and low chlorine levels.
IPC 1-7
IPC 8 full level
C03B 8/04 (2006.01); C03B 19/14 (2006.01); C03B 20/00 (2006.01); C03C 3/06 (2006.01); C03C 4/00 (2006.01); G02B 1/00 (2006.01); G03F 1/00 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC (source: EP KR)
C03B 19/1407 (2013.01 - EP); C03B 19/1415 (2013.01 - EP); C03B 19/1423 (2013.01 - EP); C03B 19/1453 (2013.01 - EP); C03C 3/06 (2013.01 - EP); C03C 4/0085 (2013.01 - EP); G03F 1/60 (2013.01 - EP); G03F 7/70216 (2013.01 - EP); G03F 7/70958 (2013.01 - EP); G03F 9/00 (2013.01 - KR); C03B 2201/07 (2013.01 - EP); C03B 2201/075 (2013.01 - EP); C03B 2201/12 (2013.01 - EP); C03B 2201/20 (2013.01 - EP); C03B 2201/21 (2013.01 - EP); C03B 2207/30 (2013.01 - EP); C03B 2207/32 (2013.01 - EP); C03B 2207/36 (2013.01 - EP); C03B 2207/38 (2013.01 - EP); C03C 2201/12 (2013.01 - EP); C03C 2201/20 (2013.01 - EP); C03C 2201/21 (2013.01 - EP); C03C 2201/23 (2013.01 - EP); C03C 2201/30 (2013.01 - EP); C03C 2201/32 (2013.01 - EP); C03C 2203/54 (2013.01 - EP)
Citation (search report)
- [X] WO 0048046 A1 20000817 - CORNING INC [US]
- [X] EP 1043282 A1 20001011 - ASAHI GLASS CO LTD [JP]
- [E] WO 0221217 A1 20020314 - CORNING INC [US]
- [A] WO 0055689 A1 20000921 - CORNING INC [US], et al
- [X] PATENT ABSTRACTS OF JAPAN vol. 2000, no. 12 3 January 2001 (2001-01-03)
- See references of WO 02069054A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 02069054 A1 20020906; EP 1368711 A1 20031210; EP 1368711 A4 20060719; JP 2004525409 A 20040819; KR 20040030512 A 20040409; TW 554260 B 20030921
DOCDB simple family (application)
US 0144547 W 20011128; EP 01995254 A 20011128; JP 2002568111 A 20011128; KR 20037011150 A 20030825; TW 90124463 A 20011002