EP 1368832 A2 20031210 - DIAMONDOID-CONTAINING MATERIALS IN MICROELECTRONICS
Title (en)
DIAMONDOID-CONTAINING MATERIALS IN MICROELECTRONICS
Title (de)
DIAMONDOID ENTHALTENDE MATERIALIEN IN DER MIKROELEKTRONIK
Title (fr)
MATERIAUX DIAMANTOIDES POUR LA MICROELECTRONIQUE
Publication
Application
Priority
- US 0200506 W 20020117
- US 26284201 P 20010119
- US 33493901 P 20011204
Abstract (en)
[origin: WO02058139A2] Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
IPC 1-7
IPC 8 full level
H01L 23/373 (2006.01); C07C 4/00 (2006.01); C07C 7/04 (2006.01); C07C 7/12 (2006.01); C07C 7/135 (2006.01); C07C 13/64 (2006.01); C07C 17/10 (2006.01); C07C 17/16 (2006.01); C07C 17/383 (2006.01); C07C 17/395 (2006.01); C07C 23/20 (2006.01); C07C 47/347 (2006.01); C07C 49/423 (2006.01); C07C 205/05 (2006.01); C08G 61/00 (2006.01); C08G 61/02 (2006.01); C08G 83/00 (2006.01); C08L 65/00 (2006.01)
CPC (source: EP KR)
B82B 3/00 (2013.01 - KR); B82Y 10/00 (2013.01 - EP); B82Y 30/00 (2013.01 - EP); C07C 4/00 (2013.01 - EP); C07C 7/04 (2013.01 - EP); C07C 7/12 (2013.01 - EP); C07C 7/135 (2013.01 - EP); C07C 13/64 (2013.01 - EP); C07C 17/10 (2013.01 - EP); C07C 17/16 (2013.01 - EP); C07C 17/383 (2013.01 - EP); C07C 17/395 (2013.01 - EP); C07C 23/20 (2013.01 - EP); C07C 47/347 (2013.01 - EP); C07C 49/423 (2013.01 - EP); C07C 205/05 (2013.01 - EP); C08G 61/00 (2013.01 - EP); C08G 61/02 (2013.01 - EP); C08G 83/00 (2013.01 - EP); C08L 65/00 (2013.01 - EP); H01J 1/3048 (2013.01 - EP); B82Y 40/00 (2013.01 - KR); C07C 2603/90 (2017.04 - EP); H01J 2201/30457 (2013.01 - EP); H01L 2224/48091 (2013.01 - EP); H01L 2924/181 (2013.01 - EP)
Citation (search report)
See references of WO 02058139A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02058139 A2 20020725; WO 02058139 A3 20031016; AU 2002241831 B2 20061207; AU 2007200903 A1 20070322; AU 2007200904 A1 20070322; CA 2434791 A1 20020725; EP 1368832 A2 20031210; IL 156964 A0 20040208; JP 2004526305 A 20040826; JP 2008252107 A 20081016; JP 4178030 B2 20081112; KR 20030090619 A 20031128
DOCDB simple family (application)
US 0200506 W 20020117; AU 2002241831 A 20020117; AU 2007200903 A 20070301; AU 2007200904 A 20070301; CA 2434791 A 20020117; EP 02707421 A 20020117; IL 15696402 A 20020117; JP 2002558328 A 20020117; JP 2008121457 A 20080507; KR 20037009155 A 20030708