EP 1373151 A1 20040102 - OXYGEN DOPING OF SILICON OXYFLUORIDE GLASS
Title (en)
OXYGEN DOPING OF SILICON OXYFLUORIDE GLASS
Title (de)
SAUERSTOFFDOTIERUNG VON SILICIUMOXIDFLUORIDGLAS
Title (fr)
DOPAGE A L'OXYGENE DE VERRE D'OXYFLUORURE DE SILICIUM
Publication
Application
Priority
- US 0205237 W 20020211
- US 27113501 P 20010224
- US 99778201 A 20011128
Abstract (en)
[origin: WO02068350A1] High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The doped glass (20) is made by providing an O>2< doping atmosphere (26) to a silicon oxyfluoride glass (22) in a doping vessel (28). The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a "dry," silicon oxyfluoride glass which contains doped O>2< molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass contains intersticial O>2< molecules which provide improved endurance to laser exposure. Preferably the O>2< doped silicon oxyfluoride glass is characterized by having less than 1x10?17> molecules/cm3 of molecular hydrogen and low chlorine levels.
IPC 1-7
IPC 8 full level
C03B 19/14 (2006.01); C03B 20/00 (2006.01); C03B 32/00 (2006.01); C03C 3/06 (2006.01); C03C 4/00 (2006.01); G03F 1/00 (2012.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC (source: EP KR)
C03B 19/14 (2013.01 - KR); C03B 19/1407 (2013.01 - EP); C03B 19/1415 (2013.01 - EP); C03B 19/1423 (2013.01 - EP); C03B 19/1453 (2013.01 - EP); C03C 3/06 (2013.01 - EP KR); C03C 4/00 (2013.01 - KR); C03C 4/0085 (2013.01 - EP); G03F 1/60 (2013.01 - EP); G03F 7/70216 (2013.01 - EP); G03F 7/70958 (2013.01 - EP); C03B 2201/07 (2013.01 - EP); C03B 2201/075 (2013.01 - EP); C03B 2201/12 (2013.01 - EP); C03B 2201/20 (2013.01 - EP); C03B 2201/21 (2013.01 - EP); C03B 2207/30 (2013.01 - EP); C03B 2207/32 (2013.01 - EP); C03B 2207/36 (2013.01 - EP); C03B 2207/38 (2013.01 - EP); C03C 2201/12 (2013.01 - EP); C03C 2201/20 (2013.01 - EP); C03C 2201/21 (2013.01 - EP); C03C 2201/23 (2013.01 - EP); C03C 2201/30 (2013.01 - EP); C03C 2201/32 (2013.01 - EP); C03C 2203/54 (2013.01 - EP)
Citation (search report)
See references of WO 02068350A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 02068350 A1 20020906; EP 1373151 A1 20040102; JP 2004530615 A 20041007; KR 20030082606 A 20031022
DOCDB simple family (application)
US 0205237 W 20020211; EP 02714956 A 20020211; JP 2002567872 A 20020211; KR 20037011151 A 20030825