EP 1374356 A2 20040102 - SEMICONDUCTOR LASER
Title (en)
SEMICONDUCTOR LASER
Title (de)
HALBLEITER-LASER MIT VERTIKALEM RESONATOR
Title (fr)
LASER A SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 0200471 W 20020208
- DE 10105722 A 20010208
Abstract (en)
[origin: WO02063733A2] In one variation of the invention, a semiconductor laser comprises, in addition to current shields (6), implantation regions in the marginal area of a mesa, said implantation regions acting as mode-selective regions (13). The inner opening of the current shields (6) can thus be larger than that according to prior art. This leads to low ohmic and thermal resistance and enables a high output.
IPC 1-7
IPC 8 full level
H01S 5/183 (2006.01); H01S 5/20 (2006.01)
CPC (source: EP US)
H01S 5/18333 (2013.01 - EP US); H01S 5/18308 (2013.01 - EP US); H01S 5/18311 (2013.01 - EP US); H01S 5/2059 (2013.01 - EP US); H01S 2301/18 (2013.01 - EP US)
Citation (search report)
See references of WO 02063733A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02063733 A2 20020815; WO 02063733 A3 20031016; DE 10105722 A1 20020905; DE 10105722 B4 20061214; EP 1374356 A2 20040102; JP 2004518304 A 20040617; US 2004032892 A1 20040219; US 7177339 B2 20070213
DOCDB simple family (application)
DE 0200471 W 20020208; DE 10105722 A 20010208; EP 02714002 A 20020208; JP 2002563573 A 20020208; US 63719103 A 20030808