EP 1380048 A1 20040114 - METHOD AND COMPOSITION FOR POLISHING BY CMP
Title (en)
METHOD AND COMPOSITION FOR POLISHING BY CMP
Title (de)
ZUSAMMENSETZUNG UND VERFAHREN ZUR CHEMISCH-MECHANISCHEN POLIERUNG
Title (fr)
PROCEDE ET COMPOSITION DE POLISSAGE PAR CMP
Publication
Application
Priority
US 0107734 W 20010312
Abstract (en)
[origin: WO02073681A1] A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. The copper ions replate evenly over the surface on the interconnects, which reduces the surface roughness of the interconnects.
IPC 1-7
IPC 8 full level
B24B 37/00 (2006.01); C23F 3/00 (2006.01); H01L 21/304 (2006.01); H01L 21/321 (2006.01)
CPC (source: EP KR)
C23F 3/00 (2013.01 - EP); H01L 21/304 (2013.01 - KR); H01L 21/3212 (2013.01 - EP)
Citation (search report)
See references of WO 02073681A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02073681 A1 20020919; EP 1380048 A1 20040114; JP 2004523123 A 20040729; KR 100762424 B1 20071002; KR 20030082969 A 20031023
DOCDB simple family (application)
US 0107734 W 20010312; EP 01916557 A 20010312; JP 2002572628 A 20010312; KR 20037011765 A 20030908