Global Patent Index - EP 1380055 A1

EP 1380055 A1 20040114 - SEMICONDUCTOR POWER COMPONENT AND CORRESPONDING PRODUCTION METHOD

Title (en)

SEMICONDUCTOR POWER COMPONENT AND CORRESPONDING PRODUCTION METHOD

Title (de)

HALBLEITERLEISTUNGSBAUELEMENT UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN

Title (fr)

COMPOSANT DE PUISSANCE A SEMI-CONDUCTEUR ET SON PROCEDE DE PRODUCTION

Publication

EP 1380055 A1 20040114 (DE)

Application

EP 02735015 A 20020326

Priority

  • DE 0201099 W 20020326
  • DE 10117483 A 20010407

Abstract (en)

[origin: WO02082552A1] The invention relates to a semiconductor power component and a corresponding production method, and especially a vertical NPT-IGBT for ignition applications, with a turnover voltage of less than approximately 1000 V. The semiconductor power component has a wafer substrate (51; 52) of a first type of conduction (n-) having a rear emitting region (51) of a second type of conduction (p+) and a front drift region (52) of the first type of conduction (n-). Said component also comprises a rear anode contact (58) which is connected to the emitting region (51) and partially reaches the front surface, a front MOS control structure (53,53',54, 54', 55, 55', 56, 57a), and a front cathode contact (59) which is connected to a front source region (54, 54') and a body region (53) of said front MOS control structure (53, 53', 54, 54', 55, 55', 56, 57a). The thickness of the drift region (52) is essentially larger than the width of the space charge region for a pre-determined turnover voltage, and the thickness of the rear emitting region (51) is larger than 5 & m.

IPC 1-7

H01L 29/739; H01L 21/331

IPC 8 full level

H01L 21/331 (2006.01); H01L 29/739 (2006.01)

CPC (source: EP)

H01L 29/66333 (2013.01); H01L 29/7395 (2013.01)

Citation (search report)

See references of WO 02082552A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 02082552 A1 20021017; DE 10117483 A1 20021017; EP 1380055 A1 20040114; US 2004021203 A1 20040205; US 6949439 B2 20050927

DOCDB simple family (application)

DE 0201099 W 20020326; DE 10117483 A 20010407; EP 02735015 A 20020326; US 45022203 A 20030611