Global Patent Index - EP 1381561 A1

EP 1381561 A1 20040121 - METHOD FOR THE PRODUCTION OF ONE-DIMENSIONAL NANOSTRUCTURES AND NANOSTRUCTURES OBTAINED ACCORDING TO SAID METHOD

Title (en)

METHOD FOR THE PRODUCTION OF ONE-DIMENSIONAL NANOSTRUCTURES AND NANOSTRUCTURES OBTAINED ACCORDING TO SAID METHOD

Title (de)

VERFAHREN ZUR HERSTELLUNG EINDIMENSIONALER NANOSTRUKTUREN UND SO ERHALTENE NANOSTRUKTUREN

Title (fr)

PROCEDE DE FABRICATION DE NANOSTRUCTURES UNIDIMENSIONNELLES ET NANOSTRUCTURES OBTENUES PAR CE PROCEDE

Publication

EP 1381561 A1 20040121 (FR)

Application

EP 02727669 A 20020417

Priority

  • FR 0201326 W 20020417
  • FR 0105314 A 20010419

Abstract (en)

[origin: WO02085778A1] According to the invention, parallel atomic lines (4) are formed on the surface of a silicon carbide substrate (2) and a material which can be selectively absorbed between the atomic lines without being absorbed on said atomic lines, is deposited on the surface, whereupon strips (6,8) of said material are created between said atomic lines. The invention is particularly suitable for use in the production of nanostructures having passivated or metallized strips.

IPC 1-7

B82B 1/00; H01L 51/20; C30B 33/00

IPC 8 full level

B82B 3/00 (2006.01); C30B 23/02 (2006.01)

CPC (source: EP US)

B82Y 10/00 (2013.01 - EP US); H10K 10/701 (2023.02 - EP US)

Citation (search report)

See references of WO 02085778A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 02085778 A1 20021031; CA 2444865 A1 20021031; EP 1381561 A1 20040121; FR 2823739 A1 20021025; FR 2823739 B1 20030516; JP 2004524984 A 20040819; JP 4387672 B2 20091216; US 2004132242 A1 20040708

DOCDB simple family (application)

FR 0201326 W 20020417; CA 2444865 A 20020417; EP 02727669 A 20020417; FR 0105314 A 20010419; JP 2002583317 A 20020417; US 47526903 A 20031020