EP 1382061 A2 20040121 - METHOD FOR PRODUCING A SEMI-CONDUCTOR ARRANGEMENT AND THE USE OF AN ION BEAM ARRANGEMENT FOR CARRYING OUT SAID METHOD
Title (en)
METHOD FOR PRODUCING A SEMI-CONDUCTOR ARRANGEMENT AND THE USE OF AN ION BEAM ARRANGEMENT FOR CARRYING OUT SAID METHOD
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERANORDNUNG UND VERWENDUNG EINER IONENSTRAHLANLAGE ZUR DURCHFÜHRUNG DES VERFAHRENS
Title (fr)
PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEUR ET UTILISATION D'UNE INSTALLATION A FAISCEAU IONIQUE POUR LA MISE EN OEUVRE DUDIT PROCEDE
Publication
Application
Priority
- DE 10115912 A 20010330
- EP 0203344 W 20020325
Abstract (en)
[origin: WO02080240A2] The invention relates to a lithographic method for removing a thin masking layer, particularly a Si3N4 layer on a side of a recess in a semi-conductor arrangement. According to the invention, an ion beam is orientated in an inclined manner at a certain angle towards the recess, enabling the thin masking layer to be removed in the regions exposed to the beams.
IPC 1-7
IPC 8 full level
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01)
CPC (source: EP US)
H01L 21/0337 (2013.01 - EP US); H01L 21/31116 (2013.01 - EP US); H10B 12/0385 (2023.02 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 02080240 A2 20021010; WO 02080240 A3 20031120; DE 10115912 A1 20021017; EP 1382061 A2 20040121; TW 574727 B 20040201; US 2004063321 A1 20040401
DOCDB simple family (application)
EP 0203344 W 20020325; DE 10115912 A 20010330; EP 02757724 A 20020325; TW 91106314 A 20020329; US 67576603 A 20030930