EP 1385214 A3 20070711 - Method of forming laminate and method of manufacturing photovoltaic device
Title (en)
Method of forming laminate and method of manufacturing photovoltaic device
Title (de)
Herstellungsverfahren für ein Laminat und für ein photovoltaisches Bauelement
Title (fr)
Procédé de la fabrication d'un laminé et d'un dispositif photovoltaique
Publication
Application
Priority
JP 2002209720 A 20020718
Abstract (en)
[origin: EP1385214A2] A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.
IPC 8 full level
H01L 31/04 (2006.01); H01L 31/052 (2006.01); B05D 5/12 (2006.01); C03C 17/36 (2006.01); H01L 21/00 (2006.01); H01L 21/4763 (2006.01); H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 31/0216 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
H01L 31/02168 (2013.01 - EP US); H01L 31/056 (2014.12 - EP US); Y02E 10/52 (2013.01 - EP US)
Citation (search report)
- [A] US 6172296 B1 20010109 - IWASAKI YUKIKO [JP], et al
- [A] US 5981934 A 19991109 - HIGASHIKAWA MAKOTO [JP]
- [A] US 5998730 A 19991207 - SHIOZAKI ATSUSHI [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
Designated extension state (EPC)
AL LT LV MK
DOCDB simple family (publication)
EP 1385214 A2 20040128; EP 1385214 A3 20070711; CN 100389478 C 20080521; CN 1476052 A 20040218; JP 2004055745 A 20040219; JP 4240933 B2 20090318; US 2004067321 A1 20040408; US 2005287791 A1 20051229; US 6951771 B2 20051004; US 7445952 B2 20081104
DOCDB simple family (application)
EP 03016220 A 20030717; CN 03178616 A 20030717; JP 2002209720 A 20020718; US 19751205 A 20050805; US 61693703 A 20030711