EP 1396777 A1 20040310 - Semiconductor device for adjusting threshold value shift due to short channel effect
Title (en)
Semiconductor device for adjusting threshold value shift due to short channel effect
Title (de)
Halbleiterbaustein zum Einstellen einer durch Kurzkanaleffekte verursachten Schwellspannungsverschiebung
Title (fr)
Composant semi-conducteur pour régler le déplacement de la tension de seuil provoqué par l'effet de canal court
Publication
Application
Priority
DE 10240177 A 20020830
Abstract (en)
The present invention generally relates to a semiconductor device and more specific to a semiconductor device for detecting and adjusting leakage current dependent on threshold voltage of an integrated semiconductor device implemented in sub-micron technology, i.e. transistors, and a method related thereto. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage. <IMAGE>
IPC 1-7
IPC 8 full level
G05F 3/24 (2006.01)
CPC (source: EP)
G05F 3/242 (2013.01)
Citation (search report)
- [X] US 4346344 A 19820824 - BLAUSCHILD ROBERT A
- [X] US 4789825 A 19881206 - CARELLI JOHN A [US], et al
- [X] US 4305011 A 19811208 - AUDAIRE LUC, et al
- [A] US 4716307 A 19871229 - AOYAMA KEIZO [JP]
- [A] US 6091283 A 20000718 - MURGULA JAMES E [US], et al
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1396777 A1 20040310; EP 1396777 B1 20070404; DE 60219309 D1 20070516; DE 60219309 T2 20080103
DOCDB simple family (application)
EP 02028136 A 20021218; DE 60219309 T 20021218