EP 1396881 A4 20090422 - CONDUCTIVE THIN FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHODS FOR PRODUCING THEM
Title (en)
CONDUCTIVE THIN FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHODS FOR PRODUCING THEM
Title (de)
LEITENDER DÜNNFILM FÜR EIN HALBLEITERBAUELEMENT, HALBLEITERBAUELEMENT UND VERFAHREN ZU IHRER HERSTELLUNG
Title (fr)
FILM MINCE CONDUCTEUR DESTINE A UN DISPOSITIF SEMI-CONDUCTEUR, DISPOSITIF SEMI-CONDUCTEUR ET PROCEDES DE FABRICATION ASSOCIES
Publication
Application
Priority
- JP 0204556 W 20020510
- JP 2001179567 A 20010614
Abstract (en)
[origin: EP1396881A1] A semiconductor device 1 obtained by depositing, on a substrate 2, a gate electrode 4 formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film 6, an alpha -Si:H(i) film 8, a channel protection layer 10, an alpha -Si:H(n) film 12, a source/drain electrode 14 formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film 16, and a drive electrode 18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode 4 and the source/drain electrode 14 are formed to manufacture the semiconductor device 1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/336 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP KR US)
H01L 21/2855 (2013.01 - EP US); H01L 21/28568 (2013.01 - EP US); H01L 21/32051 (2013.01 - EP US); H01L 23/53247 (2013.01 - EP US); H01L 29/458 (2013.01 - EP US); H01L 29/4908 (2013.01 - EP US); H01L 29/66765 (2013.01 - EP US); H01L 29/786 (2013.01 - KR); H01L 2924/0002 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
- [X] JP S62274748 A 19871128 - NIPPON TELEGRAPH & TELEPHONE
- [X] JP H0340471 A 19910221 - FUJI ELECTRIC CO LTD
- [X] US 5804473 A 19980908 - TAKIZAWA YUTAKA [JP]
- [A] PARK B ET AL: "Intrinsic thin film stresses in multilayered imaging pixels", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY.; US, vol. 18, no. 2, 1 March 2000 (2000-03-01), pages 688 - 692, XP012005018, ISSN: 0734-2101
- See references of WO 02103768A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 1396881 A1 20040310; EP 1396881 A4 20090422; CN 1258209 C 20060531; CN 1463466 A 20031224; JP 2002373867 A 20021226; KR 100924192 B1 20091029; KR 20030029131 A 20030411; TW 569420 B 20040101; US 2004031963 A1 20040219; US 6900461 B2 20050531; WO 02103768 A1 20021227
DOCDB simple family (application)
EP 02724756 A 20020510; CN 02802069 A 20020510; JP 0204556 W 20020510; JP 2001179567 A 20010614; KR 20037002046 A 20020510; TW 91110418 A 20020517; US 34465903 A 20030214