Global Patent Index - EP 1397833 A2

EP 1397833 A2 20040317 - SYSTEM AND METHOD TO FORM A COMPOSITE FILM STACK UTILIZING SEQUENTIAL DEPOSITION TECHNIQUES

Title (en)

SYSTEM AND METHOD TO FORM A COMPOSITE FILM STACK UTILIZING SEQUENTIAL DEPOSITION TECHNIQUES

Title (de)

VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINES ZUSAMMENGESETZTEN SCHICHTSTAPELS UNTER VERWENDUNG VON SEQUENTIELLEN ABSCHEIDETECHNIKEN

Title (fr)

SYSTEME ET PROCEDE DE FORMATION D'UN EMPILEMENT DE FILMS COMPOSITES AU MOYEN DE TECHNIQUES DE DEPOTS SEQUENTIELS

Publication

EP 1397833 A2 20040317 (EN)

Application

EP 02742217 A 20020620

Priority

  • US 0219481 W 20020620
  • US 88560901 A 20010620

Abstract (en)

[origin: US2002197863A1] A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.

IPC 1-7

H01L 21/768; H01L 21/285

IPC 8 full level

C23C 16/30 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01)

CPC (source: EP)

H01L 21/28562 (2013.01); H01L 21/76846 (2013.01)

Citation (search report)

See references of WO 03001590A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

US 2002197863 A1 20021226; US 6849545 B2 20050201; EP 1397833 A2 20040317; JP 2004536451 A 20041202; JP 4511171 B2 20100728; KR 100871082 B1 20081128; KR 20040012943 A 20040211; WO 03001590 A2 20030103; WO 03001590 A3 20030220

DOCDB simple family (application)

US 88560901 A 20010620; EP 02742217 A 20020620; JP 2003507887 A 20020620; KR 20037016524 A 20031217; US 0219481 W 20020620