EP 1399955 A1 20040324 - METHOD FOR PREPARING LOW DIELECTRIC FILMS
Title (en)
METHOD FOR PREPARING LOW DIELECTRIC FILMS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON NIEDRIG-DIELEKTRIKUM-FILMEN
Title (fr)
PROCEDES DE PREPARATION DE FILMS A CONSTANTE DIELECTRIQUE FAIBLE
Publication
Application
Priority
- KR 0201238 W 20020628
- KR 20010038050 A 20010629
Abstract (en)
[origin: WO03005429A1] A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by conducting chemical vapor deposition using, together with an O2-containing gas plasma, an organosilicon or organosilicate compound having at least one vinyl or ethinyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon.
IPC 1-7
IPC 8 full level
C23C 16/42 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); H01L 21/31 (2006.01); H01L 21/312 (2006.01); H01L 21/316 (2006.01); H01L 25/00 (2006.01)
CPC (source: EP KR US)
C23C 16/30 (2013.01 - EP US); C23C 16/401 (2013.01 - EP US); H01L 21/02126 (2013.01 - US); H01L 21/02211 (2013.01 - US); H01L 21/02216 (2013.01 - US); H01L 21/02274 (2013.01 - US); H01L 21/31 (2013.01 - KR); H01L 21/3122 (2013.01 - US); H01L 21/31633 (2013.01 - US); H01L 21/02126 (2013.01 - EP); H01L 21/02167 (2013.01 - EP); H01L 21/02211 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02274 (2013.01 - EP)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 03005429 A1 20030116; CN 1277290 C 20060927; CN 1522462 A 20040818; EP 1399955 A1 20040324; JP 2004534400 A 20041111; JP 3828540 B2 20061004; KR 20030002993 A 20030109; RU 2004102519 A 20050320; RU 2264675 C2 20051120; TW 571350 B 20040111; US 2004166240 A1 20040826; US 7087271 B2 20060808
DOCDB simple family (application)
KR 0201238 W 20020628; CN 02813172 A 20020628; EP 02743932 A 20020628; JP 2003511297 A 20020628; KR 20020028660 A 20020523; RU 2004102519 A 20020628; TW 91115011 A 20020705; US 48077003 A 20031212