Global Patent Index - EP 1402317 A2

EP 1402317 A2 20040331 - PLASTIC MALE MOLD FOR PRODUCING MICROSTRUCTURES AND NANOSTRUCTURES USING IMPRINT LITHOGRAPHY

Title (en)

PLASTIC MALE MOLD FOR PRODUCING MICROSTRUCTURES AND NANOSTRUCTURES USING IMPRINT LITHOGRAPHY

Title (de)

VERFAHREN FUR DIE ERZEUGUNG VON MIKRO- UND NANOSTRUKTUREN MIT DER IMPRINTLITHOGRAPHIE

Title (fr)

MATRICE EN MATIERE PLASTIQUE POUR PRODUIRE DES MICROSTRUCTURES ET DES NANOSTRUCTURES PAR LITHOGRAPHIE PAR IMPRESSION

Publication

EP 1402317 A2 20040331 (DE)

Application

EP 02748607 A 20020628

Priority

  • DE 0202435 W 20020628
  • DE 10134763 A 20010705

Abstract (en)

[origin: WO03005123A2] Known electron-beam lithography used for manufacturing male molds is cost-intensive and very time consuming. As a result, conventional highly sensitive electron beam resists have an insufficient plasma etching resistance and galvanic molding makes special demands on the structural profile and on the thermal stability and solubility of the resist structures. The novel production and use of lithographically produced resist structures as male mold material for use in imprint lithography for producing microstructures and nanostructures should thus overcome the drawbacks associated with the conventional procedure for producing male molds. To this end, a negative resist system is used whose lithographically produced structures correspond to the demands made on a male mold for molding thin polymer layers. Lithographically produced structures comprised of curable materials are thus used for molding, preferably those based on photoreactive epoxy resins. The invention, in turn, enables an economical and thereby low-cost production of male mold material.

[origin: WO03005123A2] The invention relates to the production of microstructures and nanostructures by hot stamping, charactererized in that lithographically produced structures are used for molding, said structures being made of curable materials, preferably based on photoreactive epoxy resins. Preferably, the structure is transferred in thin layers.

IPC 1-7

G03F 1/00

IPC 8 full level

G03F 7/00 (2006.01)

CPC (source: EP US)

B82Y 10/00 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); G03F 7/0002 (2013.01 - EP US); G03F 7/0017 (2013.01 - EP US)

Citation (search report)

See references of WO 03005123A2

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 03005123 A2 20030116; WO 03005123 A3 20030731; DE 10134763 A1 20030116; EP 1402317 A2 20040331; US 2004079730 A1 20040429

DOCDB simple family (application)

DE 0202435 W 20020628; DE 10134763 A 20010705; EP 02748607 A 20020628; US 43358903 A 20030605