EP 1402559 A1 20040331 - METHODS AND APPARATUS FOR ION IMPLANTATION WITH VARIABLE SPATIAL FREQUENCY SCAN LINES
Title (en)
METHODS AND APPARATUS FOR ION IMPLANTATION WITH VARIABLE SPATIAL FREQUENCY SCAN LINES
Title (de)
VERFAHREN UND APPARAT ZUR IONENIMPLANTATION MIT VARIABLER RÄUMLICHER DICHTE DER ZEILEN DES RASTERS
Title (fr)
PROCEDE ET DISPOSITIF D'IMPLANTATION D'IONS A LIGNES DE BALAYAGE A FREQUENCE SPATIALE VARIABLE
Publication
Application
Priority
- US 0216282 W 20020523
- US 29375401 P 20010525
- US 15288702 A 20020521
Abstract (en)
[origin: US2002175297A1] Methods and apparatus for controlled ion implantation of a workpiece, such as a semiconductor wafer, are provided. The method includes generating an ion beam, scanning the ion beam across the workpiece in a first direction to produce scan lines, translating the workpiece in a second direction relative to the ion beam so that the scan lines are distributed over the workpiece with a standard spatial frequency, acquiring a dose map of the workpiece, and initiating a dose correction implant and controlling the spatial frequency of the scan lines during the dose correction, if the acquired dose map is not within specification and a required dose correction is less than a minimum dose correction that can be obtained with the standard spatial frequency of the scan lines.
IPC 1-7
IPC 8 full level
H01J 37/317 (2006.01); H01L 21/265 (2006.01)
CPC (source: EP KR US)
H01J 37/317 (2013.01 - KR); H01J 37/3171 (2013.01 - EP US); H01J 2237/30455 (2013.01 - EP US); H01J 2237/31713 (2013.01 - EP US)
Citation (search report)
See references of WO 02097853A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
US 2002175297 A1 20021128; CN 1308998 C 20070404; CN 1575503 A 20050202; EP 1402559 A1 20040331; JP 2004531066 A 20041007; JP 4101746 B2 20080618; KR 20040005988 A 20040116; WO 02097853 A1 20021205
DOCDB simple family (application)
US 15288702 A 20020521; CN 02814496 A 20020523; EP 02747858 A 20020523; JP 2003500941 A 20020523; KR 20037015412 A 20031125; US 0216282 W 20020523