EP 1407496 A1 20040414 - GALLIUM NITRIDE-BASED LED AND A PRODUCTION METHOD THEREFOR
Title (en)
GALLIUM NITRIDE-BASED LED AND A PRODUCTION METHOD THEREFOR
Title (de)
GALLIUMNITRID-BASIERTE LED UND IHR HERSTELLUNGSVERFAHREN
Title (fr)
DIODE ELECTROLUMINESCENTE A BASE DE NITRURE DE GALLIUM ET PROCEDE DE FABRICATION ASSOCIE
Publication
Application
Priority
- DE 0202677 W 20020719
- DE 10135189 A 20010719
Abstract (en)
[origin: WO03009399A1] The invention relates to a method for producing a light-emitting device based on a gallium nitride-based compound semiconductor, comprising a light-emitting layer (2), which is provided with a first and a second main surface and formed from a compound semiconductor based on gallium nitride. The inventive device also comprises a first covering layer (3), which is connected to the first main surface of the light-emitting layer (2) and formed from an n-type compound semiconductor based on gallium nitride, whose composition differs from that of the compound semiconductor of the light-emitting layer. Lastly, the inventive device comprises a second covering layer (4), which is connected to the second main surface of the light-emitting layer (2) and formed from a p-type compound semiconductor based on gallium nitride, whose composition also differs from that of the compound semiconductor of the light-emitting layer. In order to improve the luminescence yield of the device (1), the thickness of the light-emitting layer (2) in the proximity of offsets (10) is less than in the remaining area.
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01)
CPC (source: EP US)
H01L 33/007 (2013.01 - EP US); H01L 33/02 (2013.01 - EP US); H01L 33/32 (2013.01 - EP US)
Citation (search report)
See references of WO 03009399A1
Citation (examination)
EP 0599224 A1 19940601 - NICHIA KAGAKU KOGYO KK [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03009399 A1 20030130; CN 100380687 C 20080409; CN 1533612 A 20040929; DE 10135189 A1 20030220; EP 1407496 A1 20040414; JP 2004535687 A 20041125; TW 550838 B 20030901; US 2004152226 A1 20040805; US 7482181 B2 20090127
DOCDB simple family (application)
DE 0202677 W 20020719; CN 02814526 A 20020719; DE 10135189 A 20010719; EP 02754397 A 20020719; JP 2003514636 A 20020719; TW 91115939 A 20020717; US 76209704 A 20040120