EP 1414609 A4 20120328 - ETCHING PROCESS FOR MICROMACHINING CRYSTALLINE MATERIALS AND DEVICES FABRICATED THEREBY
Title (en)
ETCHING PROCESS FOR MICROMACHINING CRYSTALLINE MATERIALS AND DEVICES FABRICATED THEREBY
Title (de)
ÄTZPROZESS ZUR MIKROBEARBEITUNG VON KRISTALLINEN MATERIALIEN UND DADURCH HERGESTELLTE VORRICHTUNGEN
Title (fr)
PROCEDE DE GRAVURE PAR ATTAQUE CHIMIQUE POUR LE MICRO-USINAGE DE MATERIAUX CRISTALLINS ET DISPOSITIFS AINSI FABRIQUES
Publication
Application
Priority
- US 0223177 W 20020719
- US 30656801 P 20010719
- US 7126102 A 20020207
Abstract (en)
[origin: WO03008139A2] The present invention provides an optical microbench having intersecting structures etched into a substrate. In particular, microbenches in accordance with the present invention include structures having a planar surfaces formed along selected crystallographaich planes of a single crystal substrate. Two of the structures provided are an etch-stop pit and an anisotropically etched feature disposed adjacent the etch-stop pit. At the point of intersection between the etch-stop pit and the anisotropically etched feature the oreintation of the crystallographic planes is maintained. The present invention also provides a method for micromachining a substrate to form an optical microbench. The method comprises the steps of forming an etch-stop pit and forming an anisotropically etched feature adjacent the etch-stop pit. The method may also comprise coating the surfaces of the etch-stop it with an etch-stop layer.
IPC 8 full level
B81B 1/00 (2006.01); B81C 1/00 (2006.01); B23K 1/00 (2006.01); G02B 6/42 (2006.01); G02B 6/12 (2006.01); G02B 6/36 (2006.01); H01L 21/306 (2006.01)
CPC (source: EP KR)
G02B 6/4206 (2013.01 - EP); H01L 21/302 (2013.01 - KR); G02B 6/4234 (2013.01 - EP); G02B 2006/12176 (2013.01 - EP); H01L 21/30608 (2013.01 - EP)
Citation (search report)
- [X] US 6020272 A 20000201 - FLEMING JAMES G [US]
- [X] US 6215946 B1 20010410 - SHERRER DAVID W [US]
- [X] US 5478438 A 19951226 - NAKANISHI HIDEYUKI [JP], et al
- [X] EP 0418423 A1 19910327 - SIEMENS AG [DE]
- See references of WO 03008139A2
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 03008139 A2 20030130; WO 03008139 A3 20031127; AU 2002322561 A1 20030303; CN 1545732 A 20041110; EP 1414609 A2 20040506; EP 1414609 A4 20120328; JP 2004535304 A 20041125; KR 20040017339 A 20040226
DOCDB simple family (application)
US 0223177 W 20020719; AU 2002322561 A 20020719; CN 02816376 A 20020719; EP 02756559 A 20020719; JP 2003513732 A 20020719; KR 20047000893 A 20020719