EP 1415349 A2 20040506 - MEMORY CELL
Title (en)
MEMORY CELL
Title (de)
SPEICHERZELLE
Title (fr)
CELLULE DE MEMOIRE
Publication
Application
Priority
- DE 0202759 W 20020726
- DE 10138585 A 20010806
Abstract (en)
[origin: WO03017374A2] The invention relates to a memory cell comprising a source region, a drain region, a control gate which is situated on the source side, a control gate which is situated on the drain side, an injection gate which is arranged between the source-side control gate and the drain-side control gate, a source-side memory element which is arranged in relation to the source-side control gate, and a drain-side memory element which is arranged in relation to the drain-side control gate. In order to program the memory cell, a low electrical voltage is applied to the injection gate and a high electrical voltage is applied to the control gate.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP KR US)
H01L 29/66833 (2013.01 - KR); H01L 29/7923 (2013.01 - EP KR US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03017374 A2 20030227; WO 03017374 A3 20030530; CN 1539170 A 20041020; DE 10138585 A1 20030306; EP 1415349 A2 20040506; JP 2004538662 A 20041224; JP 4481004 B2 20100616; KR 100679775 B1 20070206; KR 20040023718 A 20040318; TW 556320 B 20031001; US 2004183125 A1 20040923; US 6998672 B2 20060214
DOCDB simple family (application)
DE 0202759 W 20020726; CN 02815454 A 20020726; DE 10138585 A 20010806; EP 02767055 A 20020726; JP 2003522178 A 20020726; KR 20047001792 A 20020726; TW 91117675 A 20020806; US 77955704 A 20040206