EP 1416547 A3 20060726 - Light-emitting device and field emission display having such light-emitting devices
Title (en)
Light-emitting device and field emission display having such light-emitting devices
Title (de)
Licht emittierendes Element und Feldemissionsdisplay mit solchem
Title (fr)
Dispositif d'émission de lumière et affichage à émission par effet de champ l'utilisant
Publication
Application
Priority
JP 2002286792 A 20020930
Abstract (en)
[origin: US2004066133A1] When a pulsed voltage is applied to a drive electrode, an electric field is concentrated in the vicinity of a slit, producing a field emission phenomenon. The emitted electrons are applied through an electrically conductive coating layer and an electron passage layer to a fluorescent layer when a bias voltage is applied to a transparent electrode. The fluorescent layer is excited to emit light through the transparent electrode as indicated by the arrows. Light-emitting devices may be arranged in a two-dimensional array, providing a field emission display.
IPC 8 full level
H01J 29/04 (2006.01); H01L 45/00 (2006.01); G09F 9/30 (2006.01); H01J 1/316 (2006.01); H01J 1/32 (2006.01); H01J 1/70 (2006.01); H01J 1/88 (2006.01); H01J 29/18 (2006.01); H01J 31/12 (2006.01); H01J 63/06 (2006.01)
CPC (source: EP US)
H01J 1/316 (2013.01 - EP US); H01J 1/70 (2013.01 - EP US); H01J 31/127 (2013.01 - EP US); H01J 63/06 (2013.01 - EP US)
Citation (search report)
- [YA] WO 0171759 A1 20010927 - JAPAN SCIENCE & TECH CORP [JP], et al
- [YA] PATENT ABSTRACTS OF JAPAN vol. 2000, no. 13 5 February 2001 (2001-02-05)
- [A] NAKAJIMA YOSHIKI ET AL: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 13, 23 September 2002 (2002-09-23), pages 2472 - 2474, XP012032038, ISSN: 0003-6951
- [A] PATENT ABSTRACTS OF JAPAN vol. 2000, no. 14 5 March 2001 (2001-03-05)
- [A] NAKAJIMA Y ET AL: "A solid-state light-emitting device based on excitations of ballistic electrons generated in nanocrystalline porous polysilicon films", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 1 (REGULAR PAPERS, SHORT NOTES & REVIEW PAPERS) JAPAN SOC. APPL. PHYS., 2001 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS (SSDM 2001) 26-28 SEPT. 2001 TOKYO, JAPAN, vol. 41, no. 4B, April 2002 (2002-04-01), pages 2707 - 2709, XP002382051, ISSN: 0021-4922 & EP 1278227 A1 20030122 - JAPAN SCIENCE & TECH CORP [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2004066133 A1 20040408; EP 1416547 A2 20040506; EP 1416547 A3 20060726; JP 2004125940 A 20040422; JP 3822551 B2 20060920
DOCDB simple family (application)
US 67338403 A 20030926; EP 03256176 A 20030930; JP 2002286792 A 20020930