EP 1417151 B9 20070808 - METHOD FOR THE FABRICATION OF SUSPENDED POROUS SILICON MICROSTRUCTURES AND APPLICATION IN GAS SENSORS
Title (en)
METHOD FOR THE FABRICATION OF SUSPENDED POROUS SILICON MICROSTRUCTURES AND APPLICATION IN GAS SENSORS
Title (de)
VERFAHREN ZUR HERSTELLUNG AUFGEHÄNGTER PORÖSER SILIZIUMMIKROSTRUKTUREN UND ANWENDUNG IN GASSENSOREN
Title (fr)
PROCEDE DE FABRICATION DE MICROSTRUCTURES EN SILICIUM POREUX EN SUSPENSION ET LEUR MISE EN OEUVRE DANS DES CAPTEURS DE GAZ
Publication
Application
Priority
- GR 0200008 W 20020218
- GR 2001100378 A 20010731
Abstract (en)
[origin: WO03011747A1] This invention provides a front-side silicon micromachining process for the fabrication of suspended Porous Silicon membranes in the form of bridges or cantilevers and of thermal sensor devices employing these membranes. The fabrication of the suspended Porous Silicon membranes comprises the following steps: (a) formation of a Porous Silicon layer (2) in, at least one, predefined area of a Silicon substrate (1), (b) definition of etch windows (5) around or inside said Porous Silicon layer (2) using standard photolithography and (c) selective etching of the Silicon substrate (1), underneath the Porous Silicon layer (2), by using dry etching techniques to provide release of the Porous Silicon membrane and to form a cavity (6) under the said Porous Silicon layer. Furthermore, the present invention provides a method for the fabrication of thermal sensors based on Porous Silicon membranes with minimal thermal losses, since the proposed methodology combines the advantages that result from the low thermal conductivity of Porous Silicon and the use of suspended membranes. Moreover, the front-side micromachining process proposed in the present invention simplifies the fabrication process. Various types of thermal sensor devices, such as calorimetric-type gas sensors, conductometric-type gas sensors and thermal conductivity sensors are described utilizing the proposed methodology.
IPC 8 full level
B81B 3/00 (2006.01); G01N 27/16 (2006.01); B81C 1/00 (2006.01); G01F 1/684 (2006.01); G01N 27/18 (2006.01); H05B 1/00 (2006.01); H05B 3/26 (2006.01); H10N 15/00 (2023.01); G01N 27/12 (2006.01)
CPC (source: EP US)
B81C 1/00682 (2013.01 - EP US); B81C 1/0069 (2013.01 - EP US); G01F 1/6845 (2013.01 - EP US); H05B 3/265 (2013.01 - EP US); B81B 2201/0278 (2013.01 - EP US); B81B 2203/0109 (2013.01 - EP US); B81B 2203/0118 (2013.01 - EP US); B81C 2201/0115 (2013.01 - EP US); G01N 27/12 (2013.01 - EP US); G01N 27/16 (2013.01 - EP US); G01N 27/18 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 03011747 A1 20030213; AT E350333 T1 20070115; CN 1538934 A 20041020; DE 60217359 D1 20070215; EP 1417151 A1 20040512; EP 1417151 B1 20070103; EP 1417151 B9 20070808; GR 1004040 B 20021031; JP 2005502480 A 20050127; US 2004195096 A1 20041007
DOCDB simple family (application)
GR 0200008 W 20020218; AT 02712117 T 20020218; CN 02815212 A 20020218; DE 60217359 T 20020218; EP 02712117 A 20020218; GR 2001100378 A 20010731; JP 2003516946 A 20020218; US 48594004 A 20040130