EP 1417500 B1 20081119 - METHODS OF CONDUCTING WAFER LEVEL BURN-IN OF ELECTRONIC DEVICES
Title (en)
METHODS OF CONDUCTING WAFER LEVEL BURN-IN OF ELECTRONIC DEVICES
Title (de)
VERFAHREN ZUR DURCHFÜHRUNG DES EINBRENNENS ELEKTRONISCHER VORRICHTUNGEN AUF NICHT VEREINZELTE HALBLEITERSCHEIBEN
Title (fr)
PROCEDES DE FIABILISATION DE NIVEAU DE TRANCHE DE DISPOSITIFS ELECTRONIQUES
Publication
Application
Priority
- US 0225640 W 20020812
- US 31191601 P 20010813
Abstract (en)
[origin: WO03017335A2] Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) are presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having back (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is described for supplying pins or contacts (110) on device side of a wafer with electrical contact. The pliable conductive layer (220) can allow for an effective series R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooling system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.
IPC 8 full level
G01R 31/316 (2006.01); H01L 21/66 (2006.01); G01R 31/27 (2006.01); G01R 31/28 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/42 (2006.01)
CPC (source: EP KR US)
G01R 31/275 (2013.01 - EP US); G01R 31/2863 (2013.01 - EP US); G01R 31/2872 (2013.01 - EP US); G01R 31/2884 (2013.01 - EP US); H01L 22/00 (2013.01 - KR); G01R 31/2831 (2013.01 - EP US); G01R 31/2874 (2013.01 - EP US); H01S 5/0021 (2013.01 - EP US); H01S 5/005 (2013.01 - EP US); H01S 5/423 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03017335 A2 20030227; WO 03017335 A3 20031218; AT E414911 T1 20081215; AU 2002323125 A1 20030303; AU 2002323126 A1 20030303; AU 2002331069 A1 20030303; AU 2002331074 A1 20030303; AU 2002356039 A1 20030303; CA 2457675 A1 20030227; CA 2457680 A1 20030227; CA 2457685 A1 20030227; CA 2457690 A1 20030227; CA 2457691 A1 20030227; CN 100533165 C 20090826; CN 1568429 A 20050119; CN 1568431 A 20050119; CN 1568432 A 20050119; CN 1568433 A 20050119; CN 1568539 A 20050119; DE 60229954 D1 20090102; EP 1417499 A2 20040512; EP 1417500 A2 20040512; EP 1417500 B1 20081119; EP 1417501 A2 20040512; EP 1417501 B1 20170531; EP 1421396 A2 20040526; EP 1423872 A2 20040602; JP 2005500686 A 20050106; JP 2005500688 A 20050106; JP 2005500690 A 20050106; JP 2005500691 A 20050106; JP 2005510044 A 20050414; JP 5009487 B2 20120822; JP 5009488 B2 20120822; KR 100780059 B1 20071129; KR 20040030103 A 20040408; KR 20040030104 A 20040408; KR 20040030105 A 20040408; KR 20040030106 A 20040408; KR 20040030107 A 20040408; US 2005024076 A1 20050203; US 2007117242 A1 20070524; US 2010264511 A1 20101021; US 7190184 B2 20070313; US 7662650 B2 20100216; US 8129253 B2 20120306; WO 03017325 A2 20030227; WO 03017325 A3 20040108; WO 03017326 A2 20030227; WO 03017326 A3 20030515; WO 03017352 A2 20030227; WO 03017352 A3 20030530; WO 03017353 A2 20030227; WO 03017353 A3 20030724
DOCDB simple family (application)
US 0225664 W 20020812; AT 02752818 T 20020812; AU 2002323125 A 20020812; AU 2002323126 A 20020812; AU 2002331069 A 20020812; AU 2002331074 A 20020812; AU 2002356039 A 20020812; CA 2457675 A 20020812; CA 2457680 A 20020812; CA 2457685 A 20020812; CA 2457690 A 20020812; CA 2457691 A 20020812; CN 02820286 A 20020812; CN 02820293 A 20020812; CN 02820297 A 20020812; CN 02820298 A 20020812; CN 02820299 A 20020812; DE 60229954 T 20020812; EP 02752818 A 20020812; EP 02757086 A 20020812; EP 02757087 A 20020812; EP 02768512 A 20020812; EP 02768518 A 20020812; JP 2003522135 A 20020812; JP 2003522136 A 20020812; JP 2003522145 A 20020812; JP 2003522161 A 20020812; JP 2003522162 A 20020812; KR 20047002232 A 20020812; KR 20047002233 A 20020812; KR 20047002234 A 20020812; KR 20047002235 A 20020812; KR 20047002236 A 20020812; US 0225639 W 20020812; US 0225640 W 20020812; US 0225648 W 20020812; US 0225663 W 20020812; US 48666602 A 20020812; US 48667204 A 20040221; US 48678002 A 20020812