EP 1423874 A2 20040602 - SEMICONDUCTOR MEMORY WITH MEMORY CELLS COMPRISING A VERTICAL SELECTION TRANSISTOR AND METHOD FOR PRODUCTION THEREOF
Title (en)
SEMICONDUCTOR MEMORY WITH MEMORY CELLS COMPRISING A VERTICAL SELECTION TRANSISTOR AND METHOD FOR PRODUCTION THEREOF
Title (de)
HALBLEITERSPEICHER MIT EINEN VERTIKALEN AUSWAHLTRANSISTOR UMFASSENDEN SPEICHERZELLEN SOWIE VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
MEMOIRE A SEMI-CONDUCTEUR A CELLULES DE MEMOIRE COMPORTANT UN TRANSISTOR DE SELECTION VERTICAL, ET PROCEDE PERMETTANT DE LA PRODUIRE
Publication
Application
Priority
- DE 0202980 W 20020814
- DE 10143650 A 20010905
Abstract (en)
[origin: DE10143650A1] A semiconductor memory cell has trenches (25,50) in a substrate (15) having a capacitor (30) and long trenches having spacer wordlines with an active region between them having a vertical select transistor. Conductive bridges between wordlines in a trench are less than half as thick as the trench width. An Independent claim is also included for a process for making the above memory.
IPC 1-7
IPC 8 full level
H01L 21/8242 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/0383 (2023.02 - EP US); H10B 12/395 (2023.02 - EP US); H10B 12/488 (2023.02 - EP US); H10B 12/0385 (2023.02 - EP US)
Citation (search report)
See references of WO 03028104A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
DE 10143650 A1 20030313; EP 1423874 A2 20040602; JP 2005504440 A 20050210; KR 100700365 B1 20070327; KR 20040033018 A 20040417; TW 556341 B 20031001; US 2004201055 A1 20041014; US 6977405 B2 20051220; WO 03028104 A2 20030403; WO 03028104 A3 20030814
DOCDB simple family (application)
DE 10143650 A 20010905; DE 0202980 W 20020814; EP 02764546 A 20020814; JP 2003531529 A 20020814; KR 20047003325 A 20020814; TW 91118906 A 20020821; US 79274204 A 20040305