Global Patent Index - EP 1425573 A1

EP 1425573 A1 20040609 - CHROMIUM/TITANIUM OXIDE SEMICONDUCTOR GAS SENSOR AND METHOD FOR PRODUCTION THEREOF

Title (en)

CHROMIUM/TITANIUM OXIDE SEMICONDUCTOR GAS SENSOR AND METHOD FOR PRODUCTION THEREOF

Title (de)

METALLOXID-HALBLEITERGASSENSOR UND VERFAHREN ZU SEINER HERSTELLUNG

Title (fr)

DETECTEUR DE GAZ CHROME-TITANE-OXYDE-SEMI-CONDUCTEUR ET PROCEDE PERMETTANT DE LE PRODUIRE

Publication

EP 1425573 A1 20040609 (DE)

Application

EP 02779286 A 20020902

Priority

  • DE 10144900 A 20010912
  • EP 0209763 W 20020902

Abstract (en)

[origin: WO03023387A1] A metal oxide semiconductor gas sensor and a method for production thereof are disclosed, where the sensor comprises a sensor-active metal oxide thin layer applied to a substrate, in contact with at least one electrode. The sensor-active metal oxide thin layer is embodied as a chromium/titanium oxide (CTO) layer with a layer thickness of 10 nm to 1 mu m. The chromium and titanium layers are applied over each other using thin layer technology and subsequently tempered.

IPC 1-7

G01N 27/12

IPC 8 full level

G01N 27/12 (2006.01)

CPC (source: EP US)

G01N 27/125 (2013.01 - EP US)

Citation (search report)

See references of WO 03023387A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03023387 A1 20030320; DE 10144900 A1 20030410; DE 10144900 B4 20050804; EP 1425573 A1 20040609; US 2004231974 A1 20041125; US 7406856 B2 20080805

DOCDB simple family (application)

EP 0209763 W 20020902; DE 10144900 A 20010912; EP 02779286 A 20020902; US 48957404 A 20040420