EP 1425785 A2 20040609 - METHOD OF FABRICATING A GATE STACK AT LOW TEMPERATURE
Title (en)
METHOD OF FABRICATING A GATE STACK AT LOW TEMPERATURE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES MEHRSCHICHT-GATES BEI NIEDRIGER TEMPERATUR
Title (fr)
PROCEDE D'EMPILEMENT DE GRILLE A BASSE TEMPERATURE
Publication
Application
Priority
- US 0227230 W 20020826
- US 31656201 P 20010831
Abstract (en)
[origin: TW559916B] The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed (30). The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300 DEG C.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01)
Citation (search report)
See references of WO 03041124A2
DOCDB simple family (publication)
DOCDB simple family (application)
EP 02798410 A 20020826; TW 91119485 A 20020828