EP 1428263 A2 20040616 - PROCESS FOR ULTRA-THIN BODY SOI DEVICES THAT INCORPORATE EPI SILICON TIPS AND ARTICLE MADE THEREBY
Title (en)
PROCESS FOR ULTRA-THIN BODY SOI DEVICES THAT INCORPORATE EPI SILICON TIPS AND ARTICLE MADE THEREBY
Title (de)
PROZESS FÜR SOI-EINRICHTUNGEN MIT ULTRADÜNNEM KÖRPER, DIE EPI-SILIZIUMSPITZEN ENTHALTEN, UND DADURCH HERGESTELLTE ARTIKEL
Title (fr)
PROCEDE DE FABRICATION DE DISPOSITIFS SILICIUM SUR OXYDE ULTRA-MINCES COMPRENANT DES EXTREMITES EN SILICIUM EPITAXIAL, ARTICLE PRODUIT DE LA SORTE
Publication
Application
Priority
- US 0321131 W 20030703
- US 19450602 A 20020712
Abstract (en)
[origin: US7473947B2] The invention relates to a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor. The invention also relates to a process of forming the transistor and to a system that incorporates the transistor.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
H01L 29/41733 (2013.01 - EP US); H01L 29/66636 (2013.01 - EP US); H01L 29/66772 (2013.01 - EP US); H01L 29/78618 (2013.01 - EP US); H01L 29/665 (2013.01 - EP US); H01L 29/6656 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004008489 A2 20040122; WO 2004008489 A3 20040318; AT E527686 T1 20111015; AU 2003249726 A1 20040202; AU 2003249726 A8 20040202; CN 100353564 C 20071205; CN 1543679 A 20041103; EP 1428263 A2 20040616; EP 1428263 B1 20111005; TW 200409174 A 20040601; TW I236699 B 20050721; US 2004007724 A1 20040115; US 2005272187 A1 20051208; US 7422971 B2 20080909; US 7473947 B2 20090106
DOCDB simple family (application)
US 0321131 W 20030703; AT 03764362 T 20030703; AU 2003249726 A 20030703; CN 03800523 A 20030703; EP 03764362 A 20030703; TW 92118609 A 20030708; US 19450602 A 20020712; US 20441805 A 20050815