Global Patent Index - EP 1433202 A2

EP 1433202 A2 20040630 - INTEGRATION OF BARRIER LAYER AND SEED LAYER

Title (en)

INTEGRATION OF BARRIER LAYER AND SEED LAYER

Title (de)

INTEGRATION VON BARRIERE- UND KEIMSCHICHT

Title (fr)

INTEGRATION D'UNE COUCHE BARRIERE ET D'UNE COUCHE GERME

Publication

EP 1433202 A2 20040630 (EN)

Application

EP 02757668 A 20020909

Priority

  • US 0228715 W 20020909
  • US 96537001 A 20010926
  • US 96537301 A 20010926
  • US 96536901 A 20010926

Abstract (en)

[origin: WO03028090A2] The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

IPC 1-7

H01L 21/768; H01L 21/285

IPC 8 full level

C23C 14/06 (2006.01); C23C 30/00 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01)

CPC (source: EP KR)

C23C 14/024 (2013.01 - EP); C23C 14/046 (2013.01 - EP); C23C 14/165 (2013.01 - EP); C23C 14/5806 (2013.01 - EP); C23C 16/045 (2013.01 - EP); C23C 16/34 (2013.01 - EP); C23C 30/00 (2013.01 - EP); H01L 21/2855 (2013.01 - EP); H01L 21/28562 (2013.01 - EP); H01L 21/768 (2013.01 - KR); H01L 21/76843 (2013.01 - EP); H01L 21/76862 (2013.01 - EP); H01L 21/76864 (2013.01 - EP); H01L 21/76873 (2013.01 - EP); H01L 23/53238 (2013.01 - EP); C25D 7/123 (2013.01 - EP); H01L 2221/1089 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP)

Citation (search report)

See references of WO 03028090A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03028090 A2 20030403; WO 03028090 A3 20030912; CN 102361004 A 20120222; CN 102361004 B 20160210; CN 1575518 A 20050202; EP 1433202 A2 20040630; JP 2005528776 A 20050922; KR 20040045007 A 20040531

DOCDB simple family (application)

US 0228715 W 20020909; CN 02821308 A 20020909; CN 201110379185 A 20020909; EP 02757668 A 20020909; JP 2003531517 A 20020909; KR 20047004515 A 20020909