EP 1446806 B1 20050316 - A FERROELECTRIC OR ELECTRET MEMORY CIRCUIT
Title (en)
A FERROELECTRIC OR ELECTRET MEMORY CIRCUIT
Title (de)
FERROELEKTRISCHE ODER ELECTRETSPEICHERSCHALTUNG
Title (fr)
CIRCUIT DE MEMOIRE FERROELECTRIQUE OU A ELECTRET
Publication
Application
Priority
- NO 0200437 W 20021122
- NO 20015735 A 20011123
Abstract (en)
[origin: WO03044801A1] In a ferroelectric or electret memory circuit (C), particularly a ferroelectric or electret memory circuit with improved fatigue resistance, a ferroelectric or electret memory cell, preferably of polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes comprises at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in the either electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. Use in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.
IPC 1-7
IPC 8 full level
H01L 27/105 (2006.01); G11C 11/22 (2006.01); H01L 21/8246 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01)
CPC (source: EP KR)
G11C 11/22 (2013.01 - EP); H01L 27/101 (2013.01 - EP); H01L 27/105 (2013.01 - KR); B82Y 10/00 (2013.01 - KR); H10B 53/00 (2023.02 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03044801 A1 20030530; AT E291273 T1 20050415; AU 2002366187 A1 20030610; AU 2002366187 B2 20060713; CA 2464082 A1 20030530; CA 2464082 C 20070327; CN 100449640 C 20090107; CN 1589479 A 20050302; DE 60203321 D1 20050421; DE 60203321 T2 20060202; EP 1446806 A1 20040818; EP 1446806 B1 20050316; ES 2238638 T3 20050901; JP 2005510078 A 20050414; KR 100603670 B1 20060720; KR 20040051614 A 20040618; NO 20015735 D0 20011123; RU 2004117774 A 20060110; RU 2269830 C1 20060210
DOCDB simple family (application)
NO 0200437 W 20021122; AT 02803576 T 20021122; AU 2002366187 A 20021122; CA 2464082 A 20021122; CN 02823259 A 20021122; DE 60203321 T 20021122; EP 02803576 A 20021122; ES 02803576 T 20021122; JP 2003546352 A 20021122; KR 20047005847 A 20021122; NO 20015735 A 20011123; RU 2004117774 A 20021122