Global Patent Index - EP 1448725 A4

EP 1448725 A4 20080723 - LOW VISCOSITY PRECURSOR COMPOSITIONS AND METHODS FOR THE DEPOSITION OF CONDUCTIVE ELECTRONIC FEATURES

Title (en)

LOW VISCOSITY PRECURSOR COMPOSITIONS AND METHODS FOR THE DEPOSITION OF CONDUCTIVE ELECTRONIC FEATURES

Title (de)

NIEDERVISKOSE PRECURSORZUSAMMENSETZUNGEN UND VERFAHREN ZUM AUFTRAGEN VON ELEKTRONISCH LEITFÄHIGEN STRUKTURELEMENTEN

Title (fr)

COMPOSITIONS DE PRECURSEUR A FAIBLE VISCOSITE ET PROCEDES DE DEPOT D'ELEMENTS ELECTRONIQUES CONDUCTEURS

Publication

EP 1448725 A4 20080723 (EN)

Application

EP 02773719 A 20021004

Priority

  • US 0231884 W 20021004
  • US 32762001 P 20011005
  • US 32762101 P 20011005

Abstract (en)

[origin: WO03032084A2] Abstract A precursor composition for the deposition and formation of an electrical feature such as a conductive feature. The precursor composition advantageously has a low viscosity enabling deposition using direct-write tools. The precursor composition also has a low conversion temperature, enabling the deposition and conversion to an electrical feature on low temperature substrates. A particularly preferred precursor composition includes silver metal for the formation of highly conductive silver features. Another particularly preferred precursor composition includes copper metal for the formation of highly conductive copper features.

IPC 1-7

C09D 11/00; H05K 1/09; H01B 1/02; B05D 5/06

IPC 8 full level

B05D 3/02 (2006.01); B05D 5/12 (2006.01); B22F 9/30 (2006.01); B41M 5/00 (2006.01); B41M 5/50 (2006.01); B41M 5/52 (2006.01); C09D 11/00 (2006.01); C23C 18/06 (2006.01); C23C 18/08 (2006.01); C23C 20/04 (2006.01); H01B 1/02 (2006.01); H01L 21/28 (2006.01); H01L 21/288 (2006.01); H01L 21/316 (2006.01); H01L 21/3205 (2006.01); H05K 1/16 (2006.01); H05K 3/10 (2006.01); H01L 21/314 (2006.01); H05K 1/03 (2006.01); H05K 1/09 (2006.01); H05K 3/12 (2006.01); H05K 3/40 (2006.01)

CPC (source: EP KR US)

B05D 5/12 (2013.01 - KR); B22F 9/30 (2013.01 - EP); C09D 11/30 (2013.01 - EP); C23C 18/06 (2013.01 - EP); C23C 18/08 (2013.01 - EP US); H01B 1/02 (2013.01 - KR); H01B 1/026 (2013.01 - EP); H05K 1/162 (2013.01 - EP); H05K 3/105 (2013.01 - EP); H01L 21/288 (2013.01 - EP); H05K 1/0346 (2013.01 - EP); H05K 1/097 (2013.01 - EP); H05K 3/107 (2013.01 - EP); H05K 3/125 (2013.01 - EP); H05K 3/1258 (2013.01 - EP); H05K 3/4061 (2013.01 - EP); H05K 3/4069 (2013.01 - EP); H05K 2201/09036 (2013.01 - EP); H05K 2203/013 (2013.01 - EP); H05K 2203/1142 (2013.01 - EP); H05K 2203/121 (2013.01 - EP)

Citation (search report)

Citation (examination)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03032084 A2 20030417; WO 03032084 A3 20030821; AU 2002337822 A1 20030422; CA 2461338 A1 20030417; CA 2461338 C 20111220; EP 1448725 A2 20040825; EP 1448725 A4 20080723; JP 2005537386 A 20051208; KR 100893564 B1 20090417; KR 20050033513 A 20050412

DOCDB simple family (application)

US 0231884 W 20021004; AU 2002337822 A 20021004; CA 2461338 A 20021004; EP 02773719 A 20021004; JP 2003534993 A 20021004; KR 20047004984 A 20040402