EP 1449256 B1 20100120 - A field effect transistor semiconductor device
Title (en)
A field effect transistor semiconductor device
Title (de)
Feldeffekttransistor-Halbleiterbauelement
Title (fr)
Dispositif semi-conducteur a transistor a effet de champ
Publication
Application
Priority
- GB 0127479 A 20011116
- GB 0130019 A 20011217
- GB 0221839 A 20020920
- IB 0204759 W 20021113
Abstract (en)
[origin: WO03043089A1] A field effect transistor semiconductor device (1) comprises a source region (33), a drain region (14) and a drain drift region (11), the device having a field shaping region (20) adjacent the drift region (11) and arranged such that, in use, when a voltage is applied between the source (33) and drain (14) regions and the device is non-conducting, a substantially constant electric field is generated in the field shaping region (20) and accordingly in the adjacent drift region (11). The field shaping region (20), which may be intrinsic semiconductor, is arranged to function as a capacitor dielectric region (20) between a first capacitor electrode region (21) and a second capacitor electrode region (22), the first and second capacitor electrode regions (21, 22) being adjacent respective ends of the dielectric region (20) and having different electron energy barriers. The first and second capacitor electrode regions (21, 22) may be opposite conductivity semiconductor regions, or they may be a semiconductor region (21) and a Schottky barrier region (224, Figure 4). The device may be an insulated gate device (1, 13, 15, 17, 171, 172, 19, 12) particularly suitable for high or low voltage DC power applications, or a Schottky gate device (181, 182, 183) particularly suitable for RF applications.
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/41 (2006.01); H01L 21/336 (2006.01); H01L 21/338 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/095 (2006.01); H01L 29/08 (2006.01); H01L 29/12 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/772 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/80 (2006.01); H01L 29/812 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01)
CPC (source: EP US)
H01L 29/0653 (2013.01 - EP US); H01L 29/405 (2013.01 - EP US); H01L 29/407 (2013.01 - EP US); H01L 29/408 (2013.01 - EP US); H01L 29/4236 (2013.01 - EP US); H01L 29/66696 (2013.01 - EP US); H01L 29/66727 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7722 (2013.01 - EP US); H01L 29/7803 (2013.01 - EP US); H01L 29/7806 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/7824 (2013.01 - EP US); H01L 29/7825 (2013.01 - EP US); H01L 29/812 (2013.01 - EP US); H01L 29/8122 (2013.01 - EP US); H01L 29/7787 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03043089 A1 20030522; CN 100524809 C 20090805; CN 1586009 A 20050223; EP 1449256 A1 20040825; EP 1449256 B1 20100120; JP 2005510059 A 20050414; US 2003094649 A1 20030522; US 6774434 B2 20040810
DOCDB simple family (application)
IB 0204759 W 20021113; CN 02822619 A 20021113; EP 02781506 A 20021113; JP 2003544817 A 20021113; US 29399302 A 20021112