EP 1454345 A1 20040908 - INTEGRATED SEMICONDUCTOR PRODUCT COMPRISING A METAL-INSULATOR-METAL CAPACITOR
Title (en)
INTEGRATED SEMICONDUCTOR PRODUCT COMPRISING A METAL-INSULATOR-METAL CAPACITOR
Title (de)
INTEGRIERTES HALBLEITERPRODUKT MIT METALL-ISOLATOR-METALL-KONDENSATOR
Title (fr)
PRODUIT SEMI-CONDUCTEUR INTEGRE A CONDENSATEUR METAL-ISOLANT-METAL
Publication
Application
Priority
- DE 10161286 A 20011213
- EP 0213804 W 20021205
Abstract (en)
[origin: WO03054934A1] To produce an integrated semiconductor product comprising an integrated metal-insulator-metal capacitor, a dielectric auxiliary layer (6) is first deposited on a first electrode (2, 3, 5). Said auxiliary layer (6) is then opened over the first electrode (15). A dielectric layer (7) is then created, onto which the stack (8, 9, 10) of metal strips for the second electrode is applied. The metal-insulator-metal capacitor is subsequently patterned using conventional etching technology. This allows the production of dielectric capacitor layers comprising freely selectable materials of any thickness. The particular advantage of the invention is that the etching of vias can be carried out in a significantly simpler manner than in prior art, as it is not necessary to etch through the remaining dielectric capacitor layer over the metal strips.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP US)
H01L 23/5223 (2013.01 - EP); H01L 23/5226 (2013.01 - EP); H01L 28/55 (2013.01 - EP US); H01L 28/75 (2013.01 - EP US); H01L 21/76838 (2013.01 - US)
Citation (search report)
See references of WO 03054934A1
Citation (examination)
- JP 2000228497 A 20000815 - SAMSUNG ELECTRONICS CO LTD
- JP H11233723 A 19990827 - SONY CORP
- US 6086951 A 20000711 - LIN CHEN-BIN [TW], et al
- US 5825073 A 19981020 - RADOSEVICH JOSEPH RUDOLPH [US], et al
- KAR-ROY A ET AL: "HIGH DENSITY METAL INSULATOR METAL CAPACITORS USING PECVD NITRIDE FOR MIXED SIGNAL AND RF CIRCUITS", PROCEEDINGS OF THE IEEE, INTERNATIONAL INTERCONNECT TECHNOLOGYCONFERENCE, XX, XX, 24 May 1999 (1999-05-24), pages 245 - 247, XP000933962
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03054934 A1 20030703; AU 2002358618 A1 20030709; CN 100576441 C 20091230; CN 1605114 A 20050406; DE 10161286 A1 20030703; EP 1454345 A1 20040908; TW 200301963 A 20030716; US 2005012223 A1 20050120; US 7233053 B2 20070619
DOCDB simple family (application)
EP 0213804 W 20021205; AU 2002358618 A 20021205; CN 02825012 A 20021205; DE 10161286 A 20011213; EP 02792906 A 20021205; TW 91135972 A 20021212; US 86546304 A 20040610