Global Patent Index - EP 1454358 A1

EP 1454358 A1 20040908 - A METHOD FOR FABRICATING HIGH ASPECT RATIO ELECTRODES

Title (en)

A METHOD FOR FABRICATING HIGH ASPECT RATIO ELECTRODES

Title (de)

VERFAHREN ZUR HERSTELLUNG VON ELEKTRODEN MIT GROSSEM SEITENVERHÄLTNIS

Title (fr)

PROCEDE DE FABRICATION D'ELECTRODES A GRAND ALLONGEMENT

Publication

EP 1454358 A1 20040908 (EN)

Application

EP 02789028 A 20021118

Priority

  • NO 0200425 W 20021118
  • NO 20016096 A 20011214

Abstract (en)

[origin: WO03052831A1] In a method for building high aspect ratio electrodes in an electrode means (E) comprising parallel electrodes ( epsilon >1<, epsilon >2<) in a dense arrangement, the electrodes are built in a repeatedly performed sequence of successive process steps involving the use of only one and the same photomask in every patterning step, the electrodes being formed with a desired aspect ratio according to the number of times the sequence is repeated, and top surface of the electrode means planarized in a final process step.

[origin: WO03052831A1] In a method for building high aspect ratio electrodes in an electrode means (<i>E</i>) comprising parallel electrodes ( epsilon 1, epsilon 2) in a dense arrangement, the electrodes are built in a repeatedly performed sequence of successive process steps involving the use of only one and the same photomask in every patterning step, the electrodes being formed with a desired aspect ratio according to the number of times the sequence is repeated, and top surface of the electrode means planarized in a final process step.

IPC 1-7

H01L 29/41; H01L 21/28

IPC 8 full level

H01L 29/41 (2006.01); H10B 20/00 (2023.01); H10B 99/00 (2023.01)

CPC (source: EP KR US)

H01L 29/41 (2013.01 - KR); H10B 51/00 (2023.02 - US); H10B 53/30 (2023.02 - EP); H01L 28/55 (2013.01 - EP)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03052831 A1 20030626; AU 2002353669 A1 20030630; AU 2002353669 B2 20060112; CA 2466151 A1 20030626; CN 1605129 A 20050406; EP 1454358 A1 20040908; JP 2005513784 A 20050512; KR 100543077 B1 20060120; KR 20040065269 A 20040721; NO 20016096 D0 20011214; NO 20016096 L 20030616; NO 315884 B1 20031103; RU 2004120778 A 20051027; RU 2271591 C2 20060310

DOCDB simple family (application)

NO 0200425 W 20021118; AU 2002353669 A 20021118; CA 2466151 A 20021118; CN 02824907 A 20021118; EP 02789028 A 20021118; JP 2003553629 A 20021118; KR 20047009166 A 20021118; NO 20016096 A 20011214; RU 2004120778 A 20021118