EP 1454363 A1 20040908 - SEMICONDUCTOR ARRANGEMENT WITH A PN TRANSITION AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT

Title (en)

SEMICONDUCTOR ARRANGEMENT WITH A PN TRANSITION AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT

Title (de)

HALBLEITERANORDNUNG MIT EINEM PN- ÜBERGANG UND VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERANORDNUNG

Title (fr)

DISPOSITIF SEMI-CONDUCTEUR A JONCTION PN, ET PROCEDE DE PRODUCTION D'UN DISPOSITIF SEMI-CONDUCTEUR

Publication

EP 1454363 A1 20040908 (DE)

Application

EP 02798250 A 20021127

Priority

DE 0204358 W 20021127
DE 10159498 A 20011204

Abstract (en)

[origin: WO03049198A1] Disclosed is a semiconductor arrangement (200), especially a diode, with a pn transition, embodied as a chip with an edge area, comprising a first layer (2) of a first conductivity type and a second layer (1, 3) of a second conductivity type. The second layer (1, 3) consists of at least two partial layers (1, 3). Said two partial layers (1, 3) form a pn transition with the first layer (2). The pn transition of the first layer (2) with the first partial layer (3) is exclusively provided inside the chip and the pn transition between the first layer (2) and the second partial layer (1) is provided in the edge area of the chip. For each cross-section of the chip surface parallel to the plane of the chip, the first partial layer (3) solely corresponds to part of said cross-section.

IPC 1-7

H01L 29/861; H01L 29/06; H01L 29/36; H01L 21/329

IPC 8 full level

H01L 29/866 (2006.01); H01L 29/861 (2006.01); H01L 29/36 (2006.01)

CPC (source: EP US)

H01L 29/861 (2013.01 - EP US); H01L 29/36 (2013.01 - EP US)

Citation (search report)

See references of WO 03049198A1

Citation (examination)

EP 0262356 A2 19880406 - SIEMENS AG [DE]

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03049198 A1 20030612; AU 2002363824 A1 20030617; AU 2002363824 B2 20090514; CZ 20032073 A3 20031217; DE 10159498 A1 20030612; EP 1454363 A1 20040908; JP 2005512328 A 20050428; JP 4739670 B2 20110803; TW 200301968 A 20030716; TW I283928 B 20070711; US 2004099929 A1 20040527; US 7154129 B2 20061226

DOCDB simple family (application)

DE 0204358 W 20021127; AU 2002363824 A 20021127; CZ 20032073 A 20021127; DE 10159498 A 20011204; EP 02798250 A 20021127; JP 2003550292 A 20021127; TW 91134439 A 20021127; US 46709403 A 20031223