EP 1458904 A1 20040922 - PROCESS FOR TUNGSTEN DEPOSITION BY PULSED GAS FLOW CVD
Title (en)
PROCESS FOR TUNGSTEN DEPOSITION BY PULSED GAS FLOW CVD
Title (de)
VERFAHREN ZUM ABSCHEIDEN VON WOLFRAM DURCH CVD MIT GEPULSTER GAS-EINSPEISUNG
Title (fr)
PROCEDE DE DEPOT DE TUNGSTENE PAR DEPOT CHIMIQUE EN PHASE VAPEUR A GAZ PULSE
Publication
Application
Priority
- US 0222486 W 20020716
- US 2312501 A 20011217
- US 19444202 A 20020712
- US 19462902 A 20020712
Abstract (en)
[origin: WO03064724A1] Embodiments of the present invention relate to a process of forming a nucleation layer on a substrate disposed in a processing chamber. One embodiment includes introducing one or more pulses of process gases, e.g., each pulse includes a hydrogen-containing gas and a tungsten-containing gas. The hydrogen-containing gas and the tungsten-containing gas can be removed from the processing chamber between the pulses by flowing a purge gas therebetween and/or pumping the chamber.
IPC 1-7
IPC 8 full level
C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); C23C 16/44 (2006.01)
CPC (source: EP)
C23C 16/14 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); H01L 21/28562 (2013.01)
Citation (search report)
See references of WO 03064724A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03064724 A1 20030807; EP 1458904 A1 20040922; JP 2005516119 A 20050602
DOCDB simple family (application)
US 0222486 W 20020716; EP 02756489 A 20020716; JP 2003564311 A 20020716