EP 1459360 A1 20040922 - ACTIVE MATRIX THIN FILM TRANSISTOR ARRAY BACKPLANE
Title (en)
ACTIVE MATRIX THIN FILM TRANSISTOR ARRAY BACKPLANE
Title (de)
AKTIVMATRIX-DÜNNFILMTRANSISTORARRAY-RÜCKWAND
Title (fr)
FACE ARRIERE A MATRICE ACTIVE CONSTITUEE DE RESEAU DE TRANSISTORS EN COUCHES MINCES
Publication
Application
Priority
- US 0237737 W 20021121
- US 35058401 P 20011121
- US 33383801 P 20011128
- US 37413102 P 20020419
- US 38231402 P 20020521
- US 30051402 A 20021120
Abstract (en)
[origin: WO03046964A1] A thin film transistor array fabricated on a polyimide substrate forms a backplane for an electronic display. The thin film transistor array incorporate gate electrodes, a gate insulating layer 44, semiconducting channel layers 50 deposited on top of the gate insulating layer 44, a source electrode 60, a drain electrode 60 and a contact layer 52 beneath each of the source and drain electrodes 60 and in contact with at least the channel layer 50. An insulating encapsulation layer 70 is positioned on the channel layer 50. The layers are deposited onto the polyimide substrate 32 using PECVD and etched using photolithography to form the backplane.
IPC 1-7
IPC 8 full level
C09K 19/02 (2006.01); G02F 1/1333 (2006.01); G02F 1/1334 (2006.01); G02F 1/1368 (2006.01); H01L 21/336 (2006.01); H01L 21/77 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
G02F 1/133305 (2013.01 - EP); G02F 1/1334 (2013.01 - EP); G02F 1/1368 (2013.01 - EP); H01L 27/1214 (2013.01 - EP); H01L 27/1288 (2013.01 - EP US); H01L 29/66765 (2013.01 - EP); H01L 29/78603 (2013.01 - EP); H01L 29/78669 (2013.01 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03046964 A1 20030605; AU 2002350253 A1 20030610; EP 1459360 A1 20040922; EP 1459360 A4 20050914
DOCDB simple family (application)
US 0237737 W 20021121; AU 2002350253 A 20021121; EP 02786784 A 20021121