Global Patent Index - EP 1459374 A2

EP 1459374 A2 20040922 - A SHALLOW TRENCH ISOLATION APPROACH FOR IMPROVED STI CORNER ROUNDING

Title (en)

A SHALLOW TRENCH ISOLATION APPROACH FOR IMPROVED STI CORNER ROUNDING

Title (de)

VERFAHREN ZUR BILDUNG EINER FLACHEN GRABENISOLATIONSSTRUKTUR MIT VERBESSERTER RUNDUNG DER GRABENECKEN

Title (fr)

APPROCHE D'ISOLATION PAR TRANCHEE PEU PROFONDE PERMETTANT D'OBTENIR UN ARRONDI D'ANGLE POUR UNE TELLE TRANCHEE

Publication

EP 1459374 A2 20040922 (EN)

Application

EP 02806155 A 20021211

Priority

  • US 0239739 W 20021211
  • US 3263101 A 20011227
  • US 27739502 A 20021022

Abstract (en)

[origin: WO03058709A2] A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches (34) into a silicon substrate (24) between active regions (30), and performing a double liner oxidation process (56) and (60) on the trenches (34). The method further includes performing a double sacrificial oxidation process (72) and (76) on the active regions (30), wherein corners (35) of the trenches (34) are substantially rounded by the four oxidation processes.

IPC 1-7

H01L 21/762; H01L 21/311; H01L 21/316

IPC 8 full level

H01L 21/76 (2006.01); H01L 21/762 (2006.01)

CPC (source: EP KR US)

H01L 21/762 (2013.01 - KR); H01L 21/76235 (2013.01 - EP US)

Citation (search report)

See references of WO 03058709A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR

DOCDB simple family (publication)

WO 03058709 A2 20030717; WO 03058709 A3 20040219; AU 2002357172 A1 20030724; AU 2002357172 A8 20030724; CN 100349279 C 20071114; CN 1610968 A 20050427; EP 1459374 A2 20040922; EP 1459374 B1 20100317; JP 2005514791 A 20050519; KR 100951463 B1 20100407; KR 20040071266 A 20040811; TW 200303596 A 20030901; TW I278959 B 20070411; US 2003176043 A1 20030918; US 7439141 B2 20081021

DOCDB simple family (application)

US 0239739 W 20021211; AU 2002357172 A 20021211; CN 02826380 A 20021211; EP 02806155 A 20021211; JP 2003558921 A 20021211; KR 20047010183 A 20021211; TW 91136617 A 20021219; US 27739502 A 20021022