EP 1459387 A2 20040922 - TRANSISTOR
Title (en)
TRANSISTOR
Title (de)
TRANSISTOR
Title (fr)
TRANSISTOR
Publication
Application
Priority
- DE 10164176 A 20011227
- EP 0214679 W 20021220
Abstract (en)
[origin: WO03056630A2] The invention relates to a transistor comprising an emitter (1), a collector (2) and a base layer (3). According to the invention, the emitter (1) extends into the base layer (3); the base layer (3) comprises an intrinsic region (4) located between the emitter (1) and the collector (2), and an extrinsic region (6) extending between the intrinsic region (4) and a base contact (5); and said base layer (3) also contains a first layer (7) which is doped with a trivalent dopant, extends into the extrinsic region (6), and is counter-doped in the region of the emitter (1) by a pentavalent counter-dopant (8). The electrical resistance of the base layer (3) can be advantageously reduced due to said first doped layer (7).
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/10 (2006.01); H01L 29/732 (2006.01); H01L 29/737 (2006.01); H01L 29/36 (2006.01)
CPC (source: EP US)
H01L 29/1004 (2013.01 - EP US); H01L 29/66272 (2013.01 - EP US); H01L 29/732 (2013.01 - EP US); H01L 29/7375 (2013.01 - EP US); H01L 29/36 (2013.01 - EP US)
Citation (search report)
See references of WO 03056630A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03056630 A2 20030710; WO 03056630 A3 20031231; AU 2002358786 A1 20030715; AU 2002358786 A8 20030715; DE 10164176 A1 20030710; DE 10164176 B4 20071227; EP 1459387 A2 20040922; US 2005127476 A1 20050616; US 7629628 B2 20091208
DOCDB simple family (application)
EP 0214679 W 20021220; AU 2002358786 A 20021220; DE 10164176 A 20011227; EP 02793105 A 20021220; US 50007905 A 20050301