Global Patent Index - EP 1464724 A3

EP 1464724 A3 20070110 - Organometallic compounds suitable for use in vapor deposition processes

Title (en)

Organometallic compounds suitable for use in vapor deposition processes

Title (de)

Metallorganische Verbindungen, geeignet zur Verwendung in Dampfphasenabscheidungsprozessen

Title (fr)

Composés organométalliques utilisables dans des procédés de dépôt en phase vapeur

Publication

EP 1464724 A3 20070110 (EN)

Application

EP 04251948 A 20040401

Priority

  • US 46079103 P 20030405
  • US 51347603 P 20031022

Abstract (en)

[origin: EP1464724A2] Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

IPC 8 full level

C23C 16/18 (2006.01); C07C 391/00 (2006.01); C07C 395/00 (2006.01); C07F 7/02 (2006.01); C07F 7/08 (2006.01); C07F 7/10 (2006.01); C07F 7/12 (2006.01); C07F 7/30 (2006.01); C23C 16/22 (2006.01); C23C 16/24 (2006.01); C23C 16/28 (2006.01); C23C 16/30 (2006.01); H01L 21/205 (2006.01)

CPC (source: EP KR US)

A61B 5/1172 (2013.01 - KR); C07C 391/00 (2013.01 - EP US); C07C 395/00 (2013.01 - EP US); C07F 7/0807 (2013.01 - EP US); C07F 7/0827 (2013.01 - EP US); C07F 7/30 (2013.01 - EP US); C23C 16/18 (2013.01 - EP US); C23C 16/28 (2013.01 - EP US); G06Q 10/063116 (2013.01 - KR); G06Q 10/1091 (2013.01 - KR); G06V 20/80 (2022.01 - KR); G07C 1/00 (2013.01 - KR)

Citation (search report)

  • [X] US 2001000476 A1 20010426 - XIA LI-QUN [US], et al
  • [X] US 2002180028 A1 20021205 - BOROVIK ALEXANDER S [US], et al
  • [X] US 2001048973 A1 20011206 - SATO YUUSUKE [JP], et al
  • [X] US 5593741 A 19970114 - IKEDA YASUO [JP]
  • [X] US 5459108 A 19951017 - DOI TSUKASA [JP], et al
  • [X] EP 0481706 A1 19920422 - KAWASAKI STEEL CO [JP]
  • [X] US 2002090835 A1 20020711 - CHAKRAVARTI ASHIMA B [US], et al
  • [X] US 5976991 A 19991102 - LAXMAN RAVI KUMAR [US], et al
  • [X] US 5874368 A 19990223 - LAXMAN RAVI KUMAR [US], et al
  • [X] US 4877651 A 19891031 - DORY THOMAS S [US]
  • [XA] J. POLA ET AL.: "Chemical Vapour Deposition of germanium films by Laser-Induced Photolysis of ethygermanes", JOURNAL OF THE CHEMICAL SOCIETY - FARADAY TRANSACTIONS, vol. 88, no. 12, 21 June 1992 (1992-06-21), pages 1637 - 1641, XP000269984, ISSN: 0956-5000
  • [XA] P. MAZEROLLES ET AL.: "Précurseurs organométalliques de couches minces amorphes semiconductrices - I. Thermolyse de dérivés organogermanes bêta-éthyléniques (phase gazeuse)", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 328, no. 1-2, 14 July 1987 (1987-07-14), pages 49 - 59, XP002409620
  • [A] R. FAJGAR ET AL.: "Germanium-containing coatings by IR laser-induced decomposition of ethoxy(trimethyl) germane and tetramethylgermane", APPLIED SURFACE SCIENCE, vol. 86, no. 1-4, February 1995 (1995-02-01), pages 530 - 532, XP005278424, ISSN: 0169-4332
  • [A] Y. AVIGAL ET AL.: "Low carbon contamination of epitaxial germanium films produced by pyrolysis of alkyl germanium compounds", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 122, no. 9, September 1975 (1975-09-01), XP002409621

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL HR LT LV MK

DOCDB simple family (publication)

EP 1464724 A2 20041006; EP 1464724 A3 20070110; EP 1464724 B1 20081210; CN 100516289 C 20090722; CN 1584108 A 20050223; DE 602004018219 D1 20090122; DE 602004030058 D1 20101223; EP 1990345 A1 20081112; EP 1990345 B1 20101110; JP 2004308007 A 20041104; JP 2010235633 A 20101021; JP 4954448 B2 20120613; JP 5460501 B2 20140402; KR 101059732 B1 20110826; KR 101200524 B1 20121113; KR 20040086811 A 20041012; KR 20110091491 A 20110811; SG 126757 A1 20061129; TW 200424243 A 20041116; TW I318222 B 20091211; US 2004194703 A1 20041007; US 2009156852 A1 20090618; US 7413776 B2 20080819; US 7767840 B2 20100803

DOCDB simple family (application)

EP 04251948 A 20040401; CN 200410055267 A 20040405; DE 602004018219 T 20040401; DE 602004030058 T 20040401; EP 08163178 A 20040401; JP 2004099110 A 20040330; JP 2010158413 A 20100713; KR 20040022845 A 20040402; KR 20110070787 A 20110718; SG 200401872 A 20040402; TW 93109194 A 20040402; US 22834608 A 20080812; US 81761804 A 20040402