Title (en)

METHOD FOR MAKING A SEMICONDUCTOR PHOTODETECTOR, IN PARTICULAR IN THE LOW-ENERGY UV-X DOMAIN, AND PHOTODETECTOR OBTAINED BY SAID METHOD

Title (de)

HERSTELLUNGSVERFAHREN EINES HALBLEITER-PHOTODETEKTORS, INSBESONDERE FÜR DEN UV-BEREICH UND WEICHE RÖNTGENSTRAHLUNG, UND NACH DIESEM VERFAHREN HERGESTELLTER PHOTODETEKTOR

Title (fr)

PROCEDE DE FABRICATION D'UN PHOTODETECTEUR SEMICONDUCTEUR, NOTAMMENT DANS LE DOMAINE UV-X DE BASSE ENERGIE, ET PHOTODETECTEUR OBTENU PAR CE PROCEDE

Publication

EP 1466349 A2 20041013 (FR)

Application

EP 02796835 A 20021104

Priority

• FR 0203766 W 20021104
• FR 0114326 A 20011106

Abstract (en)

[origin: WO03041120A2] The invention concerns a method for making a semiconductor photodetector, in particular in the low-energy UV-X domain, and a photodetector obtained by said method. The invention is characterized in that it consists in making a photodetecting element (22) in photodetecting semiconductor material, said element being provided with electrodes (24, 26). After making the photodetecting element and without impairing the electrodes, it consists in removing a surface layer of the photodetecting semiconductor material to produce a new surface layer having the electrical properties of said material volume.

IPC 1-7

H01L 21/00

IPC 8 full level

H01L 21/00 (2006.01); H01L 31/08 (2006.01); H01L 31/101 (2006.01); H01L 31/115 (2006.01); H01L 31/18 (2006.01)

IPC 8 main group level

H01L (2006.01)

CPC (source: EP)

H01L 31/085 (2013.01); H01L 31/115 (2013.01)

Citation (search report)

See references of WO 03041120A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03041120 A2 20030515; WO 03041120 A3 20031127; CA 2465882 A1 20030515; EP 1466349 A2 20041013; FR 2831992 A1 20030509; FR 2831992 B1 20040109

DOCDB simple family (application)

FR 0203766 W 20021104; CA 2465882 A 20021104; EP 02796835 A 20021104; FR 0114326 A 20011106