EP 1466351 A1 20041013 - METHOD FOR MASKING A RECESS IN A STRUCTURE WITH A LARGE ASPECT RATIO
Title (en)
METHOD FOR MASKING A RECESS IN A STRUCTURE WITH A LARGE ASPECT RATIO
Title (de)
VERFAHREN ZUR MASKIERUNG EINER AUSNEHMUNG EINER STRUKTUR MIT EINEM GROSSEN ASPEKTVERHÄLTNIS
Title (fr)
PROCEDE POUR MASQUER UN CREUX D'UNE STRUCTURE PRESENTANT UN GRAND FACTEUR DE FORME
Publication
Application
Priority
- DE 10201178 A 20020115
- EP 0300087 W 20030108
Abstract (en)
[origin: DE10201178A1] Masking first recesses of a structure having large aspect ratio comprises applying filler layer (5) so that a hollow space (6) is formed in first recesses, and removing filler layer up to hollow space region by etching. Etching is also carried out in hollow space, and filler layer is removed more quickly from first recesses than from further recesses. Etching process is stopped after removing filler layer from first recesses. Preferred Features: The etching process is an isotropic etching process. The structure has connectors (4) having a sacrificial layer applied on the surface before applying the filler layer. The filler layer is a silicon oxide layer deposited using a TEOS process.
IPC 1-7
IPC 8 full level
H01L 21/033 (2006.01)
CPC (source: EP KR US)
H01L 21/033 (2013.01 - KR); H01L 21/0337 (2013.01 - EP US); H01L 21/76 (2013.01 - KR)
Citation (search report)
See references of WO 03060966A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
DE 10201178 A1 20030626; EP 1466351 A1 20041013; KR 100620978 B1 20060914; KR 20040076888 A 20040903; TW 200305969 A 20031101; US 2005224451 A1 20051013; US 7261829 B2 20070828; WO 03060966 A1 20030724
DOCDB simple family (application)
DE 10201178 A 20020115; EP 0300087 W 20030108; EP 03701495 A 20030108; KR 20047010873 A 20030108; TW 91137127 A 20021224; US 50146405 A 20050408