Global Patent Index - EP 1472179 A2

EP 1472179 A2 20041103 - CHEMICAL PROCESSING USING NON-THERMAL DISCHARGE PLASMA

Title (en)

CHEMICAL PROCESSING USING NON-THERMAL DISCHARGE PLASMA

Title (de)

CHEMISCHE VERARBEITUNG UNTER VERWENDUNG EINES NICHTTHERMISCHEN ENTLADUNGSPLASMAS

Title (fr)

TRAITEMENT CHIMIQUE A L'AIDE D'UN PLASMA DE DECHARGE NON THERMIQUE

Publication

EP 1472179 A2 20041103 (EN)

Application

EP 02802757 A 20020802

Priority

  • US 0224477 W 20020802
  • US 30953001 P 20010802
  • US 35834002 P 20020219

Abstract (en)

[origin: WO03040027A1] A method for activating chemical reactions using non-thermal capillary discharge plasma (NT-CDP) unit or a non-thermal slot discharge plasma (NT-SPD) unit (collectively referred to as "NT-CDP/SDP"). The NT-CDP/SDP unit includes a first electrode disposed between two dielectric layers (8 and 9), wherein the first electrode and dielectric layers having at least one opening (e.g., capillary or a slot) defined therethrough. A dielectric sleeve (3) inserted into the opening, and at least one second electrode (2) (e.g., in the shape of a pin, ring, metal wire, or tapered metal blade) is disposed in fluid communication with an associated opening. A non-thermal plasma discharge is emitted from the opening when a voltage differential is applied between the first and a second electrodes. Chemical feedstock to be treated is then exposed to the non-thermal plasma. This processing is suited for the following exemplary chemical reactions as (i) partial oxidation of hydrocarbon feedstock to produce fictionalized organic compounds; (ii) chemical stabilization of a polymer fiber (e.g., PAN fiber precursor in carbon fiber production; (iii) pre-reforming of higher chain length petroleum hydrocarbons to generate a feedstock suitable for reforming; (iv) natural gas reforming in a chemically reducingatmosphere (e.g., ammonia or urea) to produce carbon monoxide andhydrogen gas; or (v) plasma enhanced water gas shifting.

IPC 1-7

C01B 3/24; C10G 27/04; C10G 32/02; C10G 35/16

IPC 8 full level

B01J 19/08 (2006.01); C01B 3/12 (2006.01); C01B 3/14 (2006.01); C01B 3/24 (2006.01); C01B 3/34 (2006.01); C01B 3/36 (2006.01); C01B 32/40 (2017.01); C10G 27/04 (2006.01); C10G 32/02 (2006.01); C10G 35/16 (2006.01); D06M 10/02 (2006.01); H01M 8/06 (2006.01)

CPC (source: EP KR)

B01J 19/08 (2013.01 - KR); B01J 19/088 (2013.01 - EP); C01B 3/14 (2013.01 - EP); C01B 3/342 (2013.01 - EP); C01B 32/40 (2017.07 - EP); C10G 35/16 (2013.01 - EP); B01J 2219/0809 (2013.01 - EP); B01J 2219/0828 (2013.01 - EP); B01J 2219/083 (2013.01 - EP); B01J 2219/0875 (2013.01 - EP); B01J 2219/0892 (2013.01 - EP); B01J 2219/0896 (2013.01 - EP); C01B 2203/0205 (2013.01 - EP); C01B 2203/0283 (2013.01 - EP); C01B 2203/0861 (2013.01 - EP)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR

DOCDB simple family (publication)

WO 03040027 A1 20030515; WO 03040027 A9 20040304; CA 2456202 A1 20030515; CN 1310827 C 20070418; CN 1555340 A 20041215; EP 1472179 A2 20041103; EP 1472179 A4 20060517; JP 2005519729 A 20050707; KR 20040029388 A 20040406

DOCDB simple family (application)

US 0224477 W 20020802; CA 2456202 A 20020802; CN 02818102 A 20020802; EP 02802757 A 20020802; JP 2003542081 A 20020802; KR 20047001530 A 20020802