EP 1472710 A1 20041103 - METHOD AND DEVICE FOR ETCHING A THIN CONDUCTIVE LAYER WHICH IS DISPOSED ON AN INSULATING PLATE SUCH AS TO FORM AN ELECTRODE NETWORK THEREON
Title (en)
METHOD AND DEVICE FOR ETCHING A THIN CONDUCTIVE LAYER WHICH IS DISPOSED ON AN INSULATING PLATE SUCH AS TO FORM AN ELECTRODE NETWORK THEREON
Title (de)
VERFAHREN UND EINRICHTUNG ZUM ÄTZEN EINER DÜNNEN LEITFÄHIGEN SCHICHT, DIE AUF EINER ISOLIERENDEN PLATTE ANGEORDNET IST, UM DARAUF EIN ELEKTRODENNETZWERK ZU BILDEN
Title (fr)
PROCEDE ET DISPOSITIF POUR DECAPER UNE COUCHE MINCE CONDUCTRICE DEPOSEE SUR UNE PLAQUE ISOLANTE, DE MANIERE A Y FORMER UN RESEAU D'ELECTRODES.
Publication
Application
Priority
- FR 0203586 W 20021021
- FR 0113953 A 20011029
Abstract (en)
[origin: WO03038852A1] The invention relates to a method and device for etching a thin conductive layer which is disposed on an insulating plate such as to form an electrode network thereon. Before the etching takes place, a protective film, comprising patterns corresponding to the electrodes in the network, is applied, said film being removed after etching. The inventive etching method consists in: moving the plate (1) in the general direction of the electrodes to be formed; circulating an electrochemical bath in a shear zone (7) which is defined by the surface of the layer to be etched and by the surface (61) of a counter electrode (10); and passing an electric current between the counter electrode (10) and the zones which are not protected by the protective film, said current being conveyed over a line of contacts which is disposed on the surface of the conductive layer (2) perpendicularly to the direction of passage D. In this way, etching homogeneity and network formation precision are improved.
IPC 1-7
IPC 8 full level
C25F 3/14 (2006.01); C25F 7/00 (2006.01); G09F 9/00 (2006.01); G09F 9/30 (2006.01); H01J 9/02 (2006.01); H01J 9/14 (2006.01); H01J 11/02 (2006.01); H05K 3/07 (2006.01)
CPC (source: EP KR US)
C25F 3/14 (2013.01 - EP US); C25F 7/00 (2013.01 - EP US); H01J 9/14 (2013.01 - EP US); H01J 11/20 (2013.01 - KR); H01J 11/22 (2013.01 - KR); H05K 3/07 (2013.01 - EP US); H01J 2217/49207 (2013.01 - EP US)
Citation (search report)
See references of WO 03038852A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
WO 03038852 A1 20030508; CN 1572009 A 20050126; EP 1472710 A1 20041103; FR 2831708 A1 20030502; FR 2831708 B1 20040130; JP 2005507560 A 20050317; KR 20050038582 A 20050427; TW 575694 B 20040211; US 2005115670 A1 20050602
DOCDB simple family (application)
FR 0203586 W 20021021; CN 02820506 A 20021021; EP 02802322 A 20021021; FR 0113953 A 20011029; JP 2003541011 A 20021021; KR 20047006268 A 20040427; TW 91124878 A 20021025; US 49389505 A 20050201