EP 1472737 A1 20041103 - CAPACITOR-LESS 1-TRANSISTOR DRAM CELL AND METHOD FOR PRODUCING THE SAME
Title (en)
CAPACITOR-LESS 1-TRANSISTOR DRAM CELL AND METHOD FOR PRODUCING THE SAME
Title (de)
KONDENSATORLOSE 1-TRANSISTOR-DRAM-ZELLE UND HERSTELLUNGSVERFAHREN
Title (fr)
CELLULE DRAM A 1 TRANSISTOR SANS CONDENSATEUR ET PROCEDE DE PRODUCTION CORRESPONDANT
Publication
Application
Priority
- DE 0300181 W 20030123
- DE 10204871 A 20020206
Abstract (en)
[origin: WO03067661A1] The invention relates to a capacitor-less 1-transistor dram cell, wherein a channel region (11) and the source/drain region (9, 10) are disposed vertically on a flank of a dielectric trench fill (4). On the opposite side, the semiconductor material is limited by the gate dielectric (18) and the gate electrode (16) that is disposed in a recess of the semiconductor material. A memory cell array comprises a plurality of vertically aligned strip-shaped semiconductor regions in which source/drain regions are implanted at the top and at the bottom, and in between which a channel region which is fully embedded in an insulating material is disposed as a floating body.
IPC 1-7
IPC 8 full level
H01L 21/8242 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01)
CPC (source: EP KR US)
H01L 27/1203 (2013.01 - EP US); H01L 29/7841 (2013.01 - EP US); H10B 12/00 (2023.02 - EP KR US); H10B 12/053 (2023.02 - EP US); Y10S 257/906 (2013.01 - EP US)
Citation (search report)
See references of WO 03067661A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03067661 A1 20030814; CN 100359695 C 20080102; CN 1628386 A 20050615; DE 10204871 A1 20030821; EP 1472737 A1 20041103; JP 2005517299 A 20050609; KR 100649782 B1 20061127; KR 20040086345 A 20041008; TW 200304217 A 20030916; TW I230455 B 20050401; US 2005064659 A1 20050324; US 2006177980 A1 20060810; US 7034336 B2 20060425; US 7341904 B2 20080311
DOCDB simple family (application)
DE 0300181 W 20030123; CN 03803414 A 20030123; DE 10204871 A 20020206; EP 03737236 A 20030123; JP 2003566901 A 20030123; KR 20047012087 A 20030123; TW 92101477 A 20030123; US 36773106 A 20060303; US 91199404 A 20040805