EP 1476905 A1 20041117 - INTEGRATED READ-ONLY MEMORY, METHOD FOR OPERATING SAID READ-ONLY MEMORY AND CORRESPONDING PRODUCTION METHOD
Title (en)
INTEGRATED READ-ONLY MEMORY, METHOD FOR OPERATING SAID READ-ONLY MEMORY AND CORRESPONDING PRODUCTION METHOD
Title (de)
INTEGRIERTER FESTWERTSPEICHER, VERFAHREN ZUM BETREIBEN EINES SOLCHEN FESTWERTSPEICHERS SOWIE HERSTELLUNGSVERFAHREN
Title (fr)
MEMOIRE ROM INTEGREE, PROCEDE POUR FAIRE FONCTIONNER UNE TELLE MEMOIRE ROM, ET PROCEDE DE PRODUCTION D'UNE TELLE MEMOIRE
Publication
Application
Priority
- DE 10207300 A 20020221
- EP 0301583 W 20030217
Abstract (en)
[origin: WO03075350A1] The invention relates an integrated read-only memory containing select transistors, each of which has a drain connection and an electrode for feeding a voltage or current. A layer is provided between the drain connections and the electrode, whose electric resistance can be changed under the effect of a configuration voltage or current. The layer is applied in a backend process.
IPC 1-7
IPC 8 full level
H01L 27/10 (2006.01); G11C 8/02 (2006.01); G11C 16/02 (2006.01); G11C 16/10 (2006.01); H01L 21/8247 (2006.01); H01L 27/28 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP US)
H10B 63/30 (2023.02 - EP US); H10B 63/34 (2023.02 - EP US); H10B 63/82 (2023.02 - EP US); H10K 19/00 (2023.02 - US); H10N 70/20 (2023.02 - EP US); H10N 70/231 (2023.02 - EP US); H10N 70/826 (2023.02 - EP US); H10N 70/881 (2023.02 - EP US); H10N 70/8836 (2023.02 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03075350 A1 20030912; DE 10207300 A1 20031009; DE 10207300 B4 20040129; EP 1476905 A1 20041117; JP 2005519472 A 20050630; US 2005201187 A1 20050915; US 7307865 B2 20071211
DOCDB simple family (application)
EP 0301583 W 20030217; DE 10207300 A 20020221; EP 03706525 A 20030217; JP 2003573703 A 20030217; US 50532005 A 20050505